TY  - JOUR
AU  - Schmitz, Michael
AU  - Engels, Stephan
AU  - Banszerus, Luca
AU  - Watanabe, Kenji
AU  - Taniguchi, Takashi
AU  - Stampfer, Christoph
AU  - Beschoten, Bernd
TI  - High mobility dry-transferred CVD bilayer graphene
JO  - Applied physics letters
VL  - 110
IS  - 26
SN  - 1077-3118
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2020-02440
SP  - 263110 -
PY  - 2017
AB  - We report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can be detached mechanically from the copper foil by a hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG interface. Confocal Raman spectroscopy reveals an AB-stacking order of the BLG crystals and a high structural quality. From transport measurements on fully encapsulated hBN/BLG/hBN Hall bar devices, we extract charge carrier mobilities up to 180 000 cm2/(Vs) at 2 K and up to 40 000 cm2/(Vs) at 300 K, outperforming state-of-the-art CVD bilayer graphene devices. Moreover, we show an on-off ratio of more than 10 000 and a band gap opening with values of up to 15 meV for a displacement field of 0.2 V/nm in such CVD grown BLG.This work was supported by the EU project Graphene Flagship (Contract No. 696656) and the DFG (BE 2441/9-1). The growth of hexagonal boron nitride crystals was supported by the Elemental Strategy Initiative conducted by the MEXT, Japan, and JSPS KAKENHI Grant Nos. JP26248061, JP15K21722, and JP25106006.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000404627700045
DO  - DOI:10.1063/1.4990390
UR  - https://juser.fz-juelich.de/record/877752
ER  -