%0 Journal Article
%A Banszerus, L.
%A Janssen, H.
%A Otto, M.
%A Epping, A.
%A Taniguchi, T.
%A Watanabe, K.
%A Beschoten, Bernd
%A Neumaier, D.
%A Stampfer, Christoph
%T Identifying suitable substrates for high-quality graphene-based heterostructures
%J 2D Materials
%V 4
%N 2
%@ 2053-1583
%C Bristol
%I IOP Publ.
%M FZJ-2020-02441
%P 025030 -
%D 2017
%X We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000424402400002
%R 10.1088/2053-1583/aa5b0f
%U https://juser.fz-juelich.de/record/877753