TY  - JOUR
AU  - Banszerus, L.
AU  - Janssen, H.
AU  - Otto, M.
AU  - Epping, A.
AU  - Taniguchi, T.
AU  - Watanabe, K.
AU  - Beschoten, Bernd
AU  - Neumaier, D.
AU  - Stampfer, Christoph
TI  - Identifying suitable substrates for high-quality graphene-based heterostructures
JO  - 2D Materials
VL  - 4
IS  - 2
SN  - 2053-1583
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2020-02441
SP  - 025030 -
PY  - 2017
AB  - We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000424402400002
DO  - DOI:10.1088/2053-1583/aa5b0f
UR  - https://juser.fz-juelich.de/record/877753
ER  -