% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Banszerus:877753,
      author       = {Banszerus, L. and Janssen, H. and Otto, M. and Epping, A.
                      and Taniguchi, T. and Watanabe, K. and Beschoten, Bernd and
                      Neumaier, D. and Stampfer, Christoph},
      title        = {{I}dentifying suitable substrates for high-quality
                      graphene-based heterostructures},
      journal      = {2D Materials},
      volume       = {4},
      number       = {2},
      issn         = {2053-1583},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2020-02441},
      pages        = {025030 -},
      year         = {2017},
      abstract     = {We report on a scanning confocal Raman spectroscopy study
                      investigating the strain-uniformity and the overall strain
                      and doping of high-quality chemical vapour deposited (CVD)
                      graphene-based heterostuctures on a large number of
                      different substrate materials, including hexagonal boron
                      nitride (hBN), transition metal dichalcogenides, silicon,
                      different oxides and nitrides, as well as polymers. By
                      applying a hBN-assisted, contamination free, dry transfer
                      process for CVD graphene, high-quality heterostructures with
                      low doping densities and low strain variations are
                      assembled. The Raman spectra of these pristine
                      heterostructures are sensitive to substrate-induced doping
                      and strain variations and are thus used to probe the
                      suitability of the substrate material for potential
                      high-quality graphene devices. We find that the flatness of
                      the substrate material is a key figure for gaining, or
                      preserving high-quality graphene.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000424402400002},
      doi          = {10.1088/2053-1583/aa5b0f},
      url          = {https://juser.fz-juelich.de/record/877753},
}