Home > Publications database > Identifying suitable substrates for high-quality graphene-based heterostructures > print |
001 | 877753 | ||
005 | 20210130005238.0 | ||
024 | 7 | _ | |a 10.1088/2053-1583/aa5b0f |2 doi |
024 | 7 | _ | |a 2128/25200 |2 Handle |
024 | 7 | _ | |a WOS:000424402400002 |2 WOS |
037 | _ | _ | |a FZJ-2020-02441 |
082 | _ | _ | |a 530 |
100 | 1 | _ | |a Banszerus, L. |0 P:(DE-HGF)0 |b 0 |
245 | _ | _ | |a Identifying suitable substrates for high-quality graphene-based heterostructures |
260 | _ | _ | |a Bristol |c 2017 |b IOP Publ. |
336 | 7 | _ | |a article |2 DRIVER |
336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1593524292_1664 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a ARTICLE |2 BibTeX |
336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
520 | _ | _ | |a We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene. |
536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
588 | _ | _ | |a Dataset connected to CrossRef |
700 | 1 | _ | |a Janssen, H. |0 P:(DE-HGF)0 |b 1 |
700 | 1 | _ | |a Otto, M. |0 P:(DE-HGF)0 |b 2 |
700 | 1 | _ | |a Epping, A. |0 P:(DE-HGF)0 |b 3 |
700 | 1 | _ | |a Taniguchi, T. |0 P:(DE-HGF)0 |b 4 |
700 | 1 | _ | |a Watanabe, K. |0 P:(DE-HGF)0 |b 5 |
700 | 1 | _ | |a Beschoten, Bernd |0 P:(DE-Juel1)178028 |b 6 |u fzj |
700 | 1 | _ | |a Neumaier, D. |0 P:(DE-HGF)0 |b 7 |
700 | 1 | _ | |a Stampfer, Christoph |0 P:(DE-Juel1)180322 |b 8 |e Corresponding author |u fzj |
773 | _ | _ | |a 10.1088/2053-1583/aa5b0f |g Vol. 4, no. 2, p. 025030 - |0 PERI:(DE-600)2779376-X |n 2 |p 025030 - |t 2D Materials |v 4 |y 2017 |x 2053-1583 |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/877753/files/Banszerus_2017_2D_Mater._4_025030.pdf |
856 | 4 | _ | |y Published on 2017-02-08. Available in OpenAccess from 2018-02-08. |u https://juser.fz-juelich.de/record/877753/files/1610.08773.pdf |
856 | 4 | _ | |x pdfa |u https://juser.fz-juelich.de/record/877753/files/Banszerus_2017_2D_Mater._4_025030.pdf?subformat=pdfa |
856 | 4 | _ | |y Published on 2017-02-08. Available in OpenAccess from 2018-02-08. |x pdfa |u https://juser.fz-juelich.de/record/877753/files/1610.08773.pdf?subformat=pdfa |
909 | C | O | |o oai:juser.fz-juelich.de:877753 |p openaire |p open_access |p VDB |p driver |p dnbdelivery |
910 | 1 | _ | |a RWTH Aachen |0 I:(DE-588b)36225-6 |k RWTH |b 0 |6 P:(DE-HGF)0 |
910 | 1 | _ | |a RWTH Aachen |0 I:(DE-588b)36225-6 |k RWTH |b 1 |6 P:(DE-HGF)0 |
910 | 1 | _ | |a RWTH Aachen |0 I:(DE-588b)36225-6 |k RWTH |b 3 |6 P:(DE-HGF)0 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)178028 |
910 | 1 | _ | |a RWTH Aachen |0 I:(DE-588b)36225-6 |k RWTH |b 6 |6 P:(DE-Juel1)178028 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 8 |6 P:(DE-Juel1)180322 |
910 | 1 | _ | |a RWTH Aachen |0 I:(DE-588b)36225-6 |k RWTH |b 8 |6 P:(DE-Juel1)180322 |
913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |d 2020-01-18 |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0160 |2 StatID |b Essential Science Indicators |d 2020-01-18 |
915 | _ | _ | |a Embargoed OpenAccess |0 StatID:(DE-HGF)0530 |2 StatID |
915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |b 2D MATER : 2018 |d 2020-01-18 |
915 | _ | _ | |a IF >= 5 |0 StatID:(DE-HGF)9905 |2 StatID |b 2D MATER : 2018 |d 2020-01-18 |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |d 2020-01-18 |
915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |d 2020-01-18 |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |d 2020-01-18 |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |d 2020-01-18 |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Clarivate Analytics Master Journal List |d 2020-01-18 |
920 | _ | _ | |l yes |
920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 1 |
980 | _ | _ | |a journal |
980 | _ | _ | |a VDB |
980 | _ | _ | |a UNRESTRICTED |
980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
980 | _ | _ | |a I:(DE-82)080009_20140620 |
980 | 1 | _ | |a FullTexts |
Library | Collection | CLSMajor | CLSMinor | Language | Author |
---|