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@ARTICLE{Dash:877866,
      author       = {Dash, Apurv and Malzbender, Jürgen and Dash, Khushbu and
                      Rasinski, Marcin and Vaßen, Robert and Guillon, Olivier and
                      Gonzalez‐Julian, Jesus},
      title        = {{C}ompressive creep of {S}i{C} whisker /
                      {T}i$_{3}${S}i{C}$_{2}$ composites at high temperature in
                      air},
      journal      = {Journal of the American Ceramic Society},
      volume       = {103},
      number       = {10},
      issn         = {1551-2916},
      address      = {Westerville, Ohio},
      publisher    = {Soc.},
      reportid     = {FZJ-2020-02484},
      pages        = {5952-5965},
      year         = {2020},
      note         = {Special Issue: Special section: Honoring the Legacy of Dr.
                      Eric “Lou” Vance},
      abstract     = {The compressive creep of a SiC whisker (SiCw) reinforced
                      Ti3SiC2 MAX phase‐based ceramic matrix composites (CMCs)
                      was studied in the temperature range 1100‐1300°C in air
                      for a stress range 20‐120 MPa. Ti3SiC2 containing 0, 10,
                      and 20 $vol\%$ of SiCw was sintered by spark plasma
                      sintering (SPS) for subsequent creep tests. The creep rate
                      of Ti3SiC2 decreased by around two orders of magnitude with
                      every additional 10 $vol\%$ of SiCw. The main creep
                      mechanisms of monolithic Ti3SiC2 and the $10\%$ CMCs
                      appeared to be the same, whereas for the $20\%$ material, a
                      different mechanism is indicated by changes in stress
                      exponents. The creep rates of $20\%$ composites tend to
                      converge to that of $10\%$ at higher stress. Viscoplastic
                      and viscoelastic creep is believed to be the deformation
                      mechanism for the CMCs, whereas monolithic Ti3SiC2 might
                      have undergone only dislocation‐based deformation. The
                      rate controlling creep is believed to be dislocation based
                      for all the materials which is also supported by similar
                      activation energies in the range 650‐700 kJ/mol.},
      cin          = {IEK-1},
      ddc          = {660},
      cid          = {I:(DE-Juel1)IEK-1-20101013},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000545427100001},
      doi          = {10.1111/jace.17323},
      url          = {https://juser.fz-juelich.de/record/877866},
}