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@ARTICLE{Kutovyi:877916,
author = {Kutovyi, Yurii and Madrid, Ignacio and Zadorozhnyi, Ihor
and Boichuk, Nazarii and Kim, Soo Hyeon and Fujii, Teruo and
Jalabert, Laurent and Offenhäusser, Andreas and Vitusevich,
Svetlana and Clément, Nicolas},
title = {{N}oise suppression beyond the thermal limit with
nanotransistor biosensors},
journal = {Scientific reports},
volume = {10},
number = {1},
issn = {2045-2322},
address = {[London]},
publisher = {Macmillan Publishers Limited, part of Springer Nature},
reportid = {FZJ-2020-02508},
pages = {12678},
year = {2020},
abstract = {Transistor biosensors are mass-fabrication-compatible
devices of interest for point of care diagnosis as well as
molecular interaction studies. While the actual transistor
gates in processors reach the sub-10 nm range for optimum
integration and power consumption, studies on design rules
for the signal-to-noise ratio (S/N) optimization in
transistor-based biosensors have been so far restricted to 1
µm2 device gate area, a range where the discrete nature of
the defects can be neglected. In this study, which combines
experiments and theoretical analysis at both numerical and
analytical levels, we extend such investigation to the
nanometer range and highlight the effect of doping type as
well as the noise suppression opportunities offered at this
scale. In particular, we show that, when a single trap is
active near the conductive channel, the noise can be
suppressed even beyond the thermal limit by monitoring the
trap occupancy probability in an approach analog to the
stochastic resonance effect used in biological systems.},
cin = {IBI-3},
ddc = {600},
cid = {I:(DE-Juel1)IBI-3-20200312},
pnm = {523 - Controlling Configuration-Based Phenomena (POF3-523)},
pid = {G:(DE-HGF)POF3-523},
typ = {PUB:(DE-HGF)16},
pubmed = {pmid:32728030},
UT = {WOS:000556384600023},
doi = {10.1038/s41598-020-69493-y},
url = {https://juser.fz-juelich.de/record/877916},
}