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@ARTICLE{Janssen:878113,
      author       = {Janssen, Johanna and Hartz, Felix and Huckemann, Till and
                      Kamphausen, Christian and Neul, Malte and Schreiber, Lars R.
                      and Pawlis, Alexander},
      title        = {{L}ow-{T}emperature {O}hmic {C}ontacts to n -{Z}n{S}e for
                      all-{E}lectrical {Q}uantum {D}evices},
      journal      = {ACS applied electronic materials},
      volume       = {2},
      number       = {4},
      issn         = {2637-6113},
      address      = {Washington, DC},
      publisher    = {ACS Publications},
      reportid     = {FZJ-2020-02640},
      pages        = {898 - 905},
      year         = {2020},
      abstract     = {The II/VI semiconductor ZnSe is an ideal host for novel
                      devices for quantum computation and communication as it can
                      be made nuclear-spin free to obtain long electron spin
                      coherence times, exhibits no electron valley-degeneracy, and
                      allows optical access. A prerequisite to electrical quantum
                      devices is low-resistive Ohmic contacts operating at
                      temperatures below 10 K, which have not been achieved in
                      ZnSe yet. Here, we present a comprehensive study on the
                      realization of Ohmic contacts to ZnSe by three different
                      technological approaches, ion implantation of halogen
                      donors, epitaxial doping with in situ contact processing,
                      and finally, a unique ZnSe regrowth technique. The latter
                      allows fabrication of Ohmic contacts with local doping that
                      can be used to connect to a buried conducting channel such
                      as those used in unipolar devices. DC measurements revealed
                      high contact resistivity for Ohmic contacts to ZnSe doped
                      via halogene ion implantation, while in situ aluminum (Al)
                      contacts on epitaxially chlorine-doped ZnSe yield record low
                      contact resistivities in the order of 10–5 Ω cm2 even at
                      cryogenic temperatures. Finally, making use of the regrowth
                      technique, local Ohmic contacts to ZnSe are demonstrated,
                      which still feature low contact resistivities of (1.4 ±
                      0.4) × 10–3 Ω cm2 at 4 K. These findings pave the way
                      for new electrical devices in the ZnSe material system such
                      as field-effect transistors, electrostatically defined
                      qubits, or quantum repeaters operating at cryogenic
                      temperatures.},
      cin          = {PGI-9 / PGI-11},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-11-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / DFG project 337456818 - Entwicklung von
                      Spin-Qubit Bauelementen aus ZnSe/},
      pid          = {G:(DE-HGF)POF3-521 / G:(GEPRIS)337456818},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000529879600005},
      doi          = {10.1021/acsaelm.9b00824},
      url          = {https://juser.fz-juelich.de/record/878113},
}