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@ARTICLE{Sasioglu:878131,
      author       = {Sasioglu, Ersoy and Aull, Thorsten and Kutschabsky,
                      Dorothea and Blügel, Stefan and Mertig, Ingrid},
      title        = {{H}alf-{M}etal–{S}pin-{G}apless-{S}emiconductor
                      {J}unctions as a {R}oute to the {I}deal {D}iode},
      journal      = {Physical review applied},
      volume       = {14},
      number       = {1},
      issn         = {2331-7019},
      address      = {College Park, Md. [u.a.]},
      publisher    = {American Physical Society},
      reportid     = {FZJ-2020-02649},
      pages        = {014082},
      year         = {2020},
      abstract     = {The ideal diode is a theoretical concept that completely
                      conducts the electric current under forward bias without any
                      loss and that behaves like a perfect insulator under reverse
                      bias. However, real diodes have a junction barrier that
                      electrons have to overcome and thus they have a threshold
                      voltage VT, which must be supplied to the diode to turn it
                      on. This threshold voltage gives rise to power dissipation
                      in the form of heat and hence is an undesirable feature. In
                      this work, based on half-metallic magnets (HMMs) and
                      spin-gapless semiconductors (SGSs) we propose a diode
                      concept that does not have a junction barrier and the
                      operation principle of which relies on the spin-dependent
                      transport properties of the HMM and SGS materials. We show
                      that the HMM and SGS materials form an Ohmic contact under
                      any finite forward bias, while for a reverse bias the
                      current is blocked due to spin-dependent filtering of the
                      electrons. Thus, the HMM-SGS junctions act as a diode with
                      zero threshold voltage VT and linear current-voltage (I-V)
                      characteristics as well as an infinite on:off ratio at zero
                      temperature. However, at finite temperatures, non-spin-flip
                      thermally excited high-energy electrons as well as
                      low-energy spin-flip excitations can give rise to a leakage
                      current and thus reduce the on:off ratio under a reverse
                      bias. Furthermore, a zero threshold voltage allows one to
                      detect extremely weak signals and due to the Ohmic HMM-SGS
                      contact, the proposed diode has a much higher current drive
                      capability and low resistance, which is advantageous
                      compared to conventional semiconductor diodes. We employ the
                      nonequilibrium Green’s function method combined with
                      density-functional theory to demonstrate the linear I-V
                      characteristics of the proposed diode based on
                      two-dimensional half-metallic Fe/MoS2 and spin-gapless
                      semiconducting VS2 planar heterojunctions.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
                      Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000553429500001},
      doi          = {10.1103/PhysRevApplied.14.014082},
      url          = {https://juser.fz-juelich.de/record/878131},
}