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@ARTICLE{Everhardt:878196,
      author       = {Everhardt, Arnoud S. and Denneulin, Thibaud and Grünebohm,
                      Anna and Shao, Yu-Tsun and Ondrejkovic, Petr and Zhou,
                      Silang and Domingo, Neus and Catalan, Gustau and Hlinka,
                      Jiří and Zuo, Jian-Min and Matzen, Sylvia and Noheda,
                      Beatriz},
      title        = {{T}emperature-independent giant dielectric response in
                      transitional {B}a{T}i{O} 3 thin films},
      journal      = {Applied physics reviews},
      volume       = {7},
      number       = {1},
      issn         = {1931-9401},
      address      = {New York, NY},
      publisher    = {AIP},
      reportid     = {FZJ-2020-02684},
      pages        = {011402 -},
      year         = {2020},
      abstract     = {Ferroelectric materials exhibit the largest dielectric
                      permittivities and piezoelectric responses in nature, making
                      them invaluable in applications from supercapacitors or
                      sensors to actuators or electromechanical transducers. The
                      origin of this behavior is their proximity to phase
                      transitions. However, the largest possible responses are
                      most often not utilized due to the impracticality of using
                      temperature as a control parameter and to operate at phase
                      transitions. This has motivated the design of solid
                      solutions with morphotropic phase boundaries between
                      different polar phases that are tuned by composition and
                      that are weakly dependent on temperature. Thus far, the best
                      piezoelectrics have been achieved in materials with
                      intermediate (bridging or adaptive) phases. But so far,
                      complex chemistry or an intricate microstructure has been
                      required to achieve temperature-independent phase-transition
                      boundaries. Here, we report such a temperature-independent
                      bridging state in thin films of chemically simple BaTiO3. A
                      coexistence among tetragonal, orthorhombic, and their
                      bridging low-symmetry phases are shown to induce continuous
                      vertical polarization rotation, which recreates a smear
                      in-transition state and leads to a giant
                      temperature-independent dielectric response. The current
                      material contains a ferroelectric state that is distinct
                      from those at morphotropic phase boundaries and cannot be
                      considered as ferroelectric crystals. We believe that other
                      materials can be engineered in a similar way to contain a
                      ferroelectric state with gradual change of structure,
                      forming a class of transitional ferroelectrics. Similar
                      mechanisms could be utilized in other materials to design
                      low-power ferroelectrics, piezoelectrics, dielectrics, or
                      shape-memory alloys, as well as efficient electro- and
                      magnetocalorics.},
      cin          = {ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000515440700001},
      doi          = {10.1063/1.5122954},
      url          = {https://juser.fz-juelich.de/record/878196},
}