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000878197 1001_ $$0P:(DE-HGF)0$$aNadtochiy, A. M.$$b0$$eCorresponding author
000878197 245__ $$aInGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)
000878197 260__ $$aNew York, NY$$bPleiades Publ.81095$$c2019
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000878197 520__ $$aLasing in the orange spectral range (599–605 nm) is demonstrated for (AlxGa1 –x)0.5In0.5P–GaAs laser diodes grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs (211)A and (322)A substrates. The active region consists of four layers of InxGa1 –xP vertically coupled quantum dots. The leakage of nonequilibrium electrons from the active region is suppressed by barriers consisting of four quantum-confinement layers of the InGaAlP solid solution with a high Ga content. The maximal optical output power in the pulsed regime is 800 mW and is limited by the catastrophic optical degradation of mirrors. The lasers fabricated from structures grown on (322)A substrates have a lower threshold current density, higher differential quantum efficiency, and smaller internal losses when compared with lasers fabricated from structures grown on (211)A substrates, which is explained by the higher barrier for nonequilibrium electrons in the first case.
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000878197 7001_ $$0P:(DE-HGF)0$$aShernyakov, Yu. M.$$b1
000878197 7001_ $$0P:(DE-HGF)0$$aKulagina, M. M.$$b2
000878197 7001_ $$0P:(DE-HGF)0$$aPayusov, A. S.$$b3
000878197 7001_ $$0P:(DE-HGF)0$$aGordeev, N. Yu.$$b4
000878197 7001_ $$0P:(DE-HGF)0$$aMaximov, M. V.$$b5
000878197 7001_ $$0P:(DE-HGF)0$$aZhukov, A. E.$$b6
000878197 7001_ $$0P:(DE-Juel1)172928$$aDenneulin, T.$$b7$$ufzj
000878197 7001_ $$0P:(DE-HGF)0$$aCherkashin, N.$$b8
000878197 7001_ $$0P:(DE-HGF)0$$aShchukin, V. A.$$b9
000878197 7001_ $$0P:(DE-HGF)0$$aLedentsov, N. N.$$b10
000878197 773__ $$0PERI:(DE-600)281119-4$$a10.1134/S1063782619160218$$gVol. 53, no. 12, p. 1699 - 1704$$n12$$p1699 - 1704$$tSemiconductors$$v53$$x1090-6479$$y2019
000878197 8564_ $$uhttps://juser.fz-juelich.de/record/878197/files/Nadtochiy2019_Article_InGaAlPGaAsInjectionLasersOfTh.pdf
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