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@ARTICLE{Nadtochiy:878197,
      author       = {Nadtochiy, A. M. and Shernyakov, Yu. M. and Kulagina, M. M.
                      and Payusov, A. S. and Gordeev, N. Yu. and Maximov, M. V.
                      and Zhukov, A. E. and Denneulin, T. and Cherkashin, N. and
                      Shchukin, V. A. and Ledentsov, N. N.},
      title        = {{I}n{G}a{A}l{P}/{G}a{A}s {I}njection {L}asers of the
                      {O}range {O}ptical {R}ange (~600 nm)},
      journal      = {Semiconductors},
      volume       = {53},
      number       = {12},
      issn         = {1090-6479},
      address      = {New York, NY},
      publisher    = {Pleiades Publ.81095},
      reportid     = {FZJ-2020-02685},
      pages        = {1699 - 1704},
      year         = {2019},
      abstract     = {Lasing in the orange spectral range (599–605 nm) is
                      demonstrated for (AlxGa1 –x)0.5In0.5P–GaAs laser diodes
                      grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs
                      (211)A and (322)A substrates. The active region consists of
                      four layers of InxGa1 –xP vertically coupled quantum dots.
                      The leakage of nonequilibrium electrons from the active
                      region is suppressed by barriers consisting of four
                      quantum-confinement layers of the InGaAlP solid solution
                      with a high Ga content. The maximal optical output power in
                      the pulsed regime is 800 mW and is limited by the
                      catastrophic optical degradation of mirrors. The lasers
                      fabricated from structures grown on (322)A substrates have a
                      lower threshold current density, higher differential quantum
                      efficiency, and smaller internal losses when compared with
                      lasers fabricated from structures grown on (211)A
                      substrates, which is explained by the higher barrier for
                      nonequilibrium electrons in the first case.},
      cin          = {ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000510631800023},
      doi          = {10.1134/S1063782619160218},
      url          = {https://juser.fz-juelich.de/record/878197},
}