% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Lbl:878198,
      author       = {Löbl, Matthias C. and Scholz, Sven and Söllner, Immo and
                      Ritzmann, Julian and Denneulin, Thibaud and Kovács, András
                      and Kardynał, Beata E. and Wieck, Andreas D. and Ludwig,
                      Arne and Warburton, Richard J.},
      title        = {{E}xcitons in {I}n{G}a{A}s quantum dots without electron
                      wetting layer states},
      journal      = {Communications Physics},
      volume       = {2},
      number       = {1},
      issn         = {2399-3650},
      address      = {London},
      publisher    = {Springer Nature},
      reportid     = {FZJ-2020-02686},
      pages        = {93},
      year         = {2019},
      abstract     = {The Stranski–Krastanov growth-mode facilitates the
                      self-assembly of quantum dots (QDs) by using
                      lattice-mismatched semiconductors, for instance, InAs and
                      GaAs. These QDs are excellent photon emitters: the optical
                      decay of QD-excitons creates high-quality single-photons,
                      which can be used for quantum communication. One significant
                      drawback of the Stranski–Krastanov mode is the wetting
                      layer. It results in a continuum close in energy to the
                      confined states of the QD. The wetting-layer-states lead to
                      scattering and dephasing of QD-excitons. Here, we report a
                      slight modification to the Stranski–Krastanov
                      growth-protocol of InAs on GaAs, which results in a radical
                      change of the QD-properties. We demonstrate that the new QDs
                      have no wetting-layer-continuum for electrons. They can host
                      highly charged excitons where up to six electrons occupy the
                      same QD. In addition, single QDs grown with this protocol
                      exhibit optical linewidths matching those of the very best
                      QDs making them an attractive alternative to conventional
                      InGaAs QDs.},
      cin          = {ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000480281000001},
      doi          = {10.1038/s42005-019-0194-9},
      url          = {https://juser.fz-juelich.de/record/878198},
}