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@ARTICLE{Ledentsov:878201,
      author       = {Ledentsov, N. N. and Shchukin, V. A. and Shernyakov, Yu. M.
                      and Kulagina, M. M. and Payusov, A. S. and Gordeev, N. Yu.
                      and Maximov, M. V. and Zhukov, A. E. and Karachinsky, L. Ya.
                      and Denneulin, T. and Cherkashin, N.},
      title        = {{R}oom temperature yellow {I}n{G}a{A}l{P} quantum dot
                      laser},
      journal      = {Solid state electronics},
      volume       = {155},
      issn         = {0038-1101},
      address      = {Oxford [u.a.]},
      publisher    = {Pergamon, Elsevier Science},
      reportid     = {FZJ-2020-02689},
      pages        = {129 - 138},
      year         = {2019},
      abstract     = {We report simulation of the conduction band alignment in
                      tensile–strained GaP–enriched barrier structures and
                      experimental results on injection lasing in the
                      green–orange spectral range (558–605 nm) in
                      (AlxGa1–x)0.5In0.5P–GaAs diodes containing such
                      barriers. The wafers were grown by metal–organic vapor
                      phase epitaxy side–by–side on (8 1 1)A, (2 1 1)A
                      and (3 2 2)A GaAs substrates, which surface orientations
                      were strongly tilted towards the [1 1 1]A direction with
                      respect to the (1 0 0) plane. Four sheets of GaP–rich
                      quantum barrier insertions were applied to suppress the
                      leakage of non–equilibrium electrons from the gain medium.
                      Two types of the gain medium were applied. In one case
                      4–fold stacked tensile–strained (In,Ga)P insertions were
                      used. Experimental data shows that self–organized
                      vertically–correlated quantum dots (QDs) are formed on
                      (2 1 1)A– and (3 2 2)A–oriented substrates,
                      while corrugated quantum wires are formed on the
                      (8 1 1)A surface. In the other case a short–period
                      superlattice (SPSL) composed of 16–fold stacked
                      quasi–lattice–matched 1.4 nm–thick In0.5Ga0.5P
                      layers separated by 4 nm–thick (Al0.6Ga0.4)0.5In0.5P
                      layers was applied. Laser diodes with 4–fold stacked QDs
                      having a threshold current densities of ∼7–10 kA/cm2
                      at room temperature were realized for both (2 1 1)A and
                      (3 2 2)A surface orientations at cavity lengths of
                      ∼1 mm. Emission wavelength at room temperature was
                      ∼599–603 nm. Threshold current density for the
                      stimulated emission was as low as ∼1 kA/cm2. For
                      (8 1 1)A–grown structures no room temperature lasing
                      was observed. SPSL structures demonstrated lasing only at
                      low temperatures <200 K. The shortest wavelength
                      (558 nm, 90 K) in combination with the highest operation
                      temperature (150 K) was realized for
                      (3 2 2)A–oriented substrates in agreement with
                      theoretical predictions.},
      cin          = {ER-C-1},
      ddc          = {620},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000466840600019},
      doi          = {10.1016/j.sse.2019.03.009},
      url          = {https://juser.fz-juelich.de/record/878201},
}