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@ARTICLE{Jiang:878239,
      author       = {Jiang, Ting-Ting and Wang, Xu-Dong and Wang, Jiang-Jing and
                      ZHOU, Wenyu and Zhang, Dan-Li and Lu, Lu and Jia, Chun-Lin
                      and Wuttig, Matthias and Mazzarello, Riccardo and Zhang,
                      Wei},
      title        = {{I}n situ study of vacancy disordering in crystalline
                      phase-change materials under electron beam irradiation},
      journal      = {Acta materialia},
      volume       = {187},
      issn         = {1359-6454},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2020-02708},
      pages        = {103 - 111},
      year         = {2020},
      abstract     = {Unconventionally high amount of atomic vacancies up to more
                      than $10\%$ are known to form in Ge-Sb-Te crystals upon
                      rapid crystallization from the amorphous phase. Upon thermal
                      annealing, an ordering process of these atomic vacancies is
                      observed, triggering a structural transition from the
                      recrystallized rocksalt structure to a stable layered
                      trigonal structure and a transition from insulator to metal.
                      In this work, we demonstrate an opposite vacancy disordering
                      process upon extensive electron beam irradiation, which is
                      accompanied by the reverse transition from the stable
                      trigonal phase to the metastable cubic phase. The combined
                      in situ transmission electron microscopy experiments and
                      density functional theory nudged elastic band calculations
                      reveal three transition stages, including (I) the vacancy
                      diffusion in the trigonal phase, (II) the change in atomic
                      stacking, and (III) the disappearance of vacancy-rich
                      planes. The mechanism of vacancy disordering is attributed
                      to kinetic knock-on collision effects of the high-energy
                      electron beam, which prevail over the heating effects.},
      cin          = {ER-C-1 / PGI-10 / JARA-FIT / JARA-HPC},
      ddc          = {670},
      cid          = {I:(DE-Juel1)ER-C-1-20170209 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)
                      / DFG project 167917811 - SFB 917: Resistiv schaltende
                      Chalkogenide für zukünftige Elektronikanwendungen:
                      Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
                      (167917811)},
      pid          = {G:(DE-HGF)POF3-143 / G:(GEPRIS)167917811},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000518706700012},
      doi          = {10.1016/j.actamat.2020.01.043},
      url          = {https://juser.fz-juelich.de/record/878239},
}