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@ARTICLE{Wang:878240,
      author       = {Wang, Xudong and Tan, Jieling and Han, Chengqian and Wang,
                      Jiang-Jing and Lu, Lu and Du, Hongchu and Jia, Chun-Lin and
                      Deringer, Volker L. and Zhou, Jian and Zhang, Wei},
      title        = {{S}ub-{A}ngstrom {C}haracterization of the {S}tructural
                      {O}rigin for {H}igh {I}n-{P}lane {A}nisotropy in 2{D}
                      {G}e{S} 2},
      journal      = {ACS nano},
      volume       = {14},
      number       = {4},
      issn         = {1936-086X},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2020-02709},
      pages        = {4456 - 4462},
      year         = {2020},
      abstract     = {Materials with layered crystal structures and high in-plane
                      anisotropy, such as black phosphorus, present unique
                      properties and thus promise for applications in electronic
                      and photonic devices. Recently, the layered structures of
                      GeS2 and GeSe2 were utilized for high-performance
                      polarization-sensitive photodetection in the short
                      wavelength region due to their high in-plane optical
                      anisotropy and wide band gap. The highly complex,
                      low-symmetric (monoclinic) crystal structures are at the
                      origin of the high in-plane optical anisotropy, but the
                      structural nature of the corresponding nanostructures
                      remains to be fully understood. Here, we present an
                      atomic-scale characterization of monoclinic GeS2
                      nanostructures and quantify the in-plane structural
                      anisotropy at the sub-angstrom level in real space by
                      Cs-corrected scanning transmission electron microscopy. We
                      elucidate the origin of this high in-plane anisotropy in
                      terms of ordered and disordered arrangement of [GeS4]
                      tetrahedra in GeS2 monolayers, through density functional
                      theory (DFT) calculations and orbital-based bonding
                      analyses. We also demonstrate high in-plane mechanical,
                      electronic, and optical anisotropies in monolayer GeS2 and
                      envision phase transitions under uniaxial strain that could
                      potentially be exploited for nonvolatile memory
                      applications.},
      cin          = {ER-C-1},
      ddc          = {540},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)
                      / DFG project 167917811 - SFB 917: Resistiv schaltende
                      Chalkogenide für zukünftige Elektronikanwendungen:
                      Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
                      (167917811)},
      pid          = {G:(DE-HGF)POF3-143 / G:(GEPRIS)167917811},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:32275386},
      UT           = {WOS:000529895500065},
      doi          = {10.1021/acsnano.9b10057},
      url          = {https://juser.fz-juelich.de/record/878240},
}