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@ARTICLE{Ding:878241,
      author       = {Ding, Keyuan and Wang, Jiangjing and Zhou, Yuxing and Tian,
                      He and Lu, Lu and Mazzarello, Riccardo and Jia, Chunlin and
                      Zhang, Wei and Rao, Feng and Ma, Evan},
      title        = {{P}hase-change heterostructure enables ultralow noise and
                      drift for memory operation},
      journal      = {Science},
      volume       = {366},
      number       = {6462},
      issn         = {0036-8075},
      address      = {Cambridge, Mass.},
      publisher    = {Moses King},
      reportid     = {FZJ-2020-02710},
      pages        = {210 - 215},
      year         = {2019},
      cin          = {ER-C-1},
      ddc          = {500},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)
                      / DFG project 167917811 - SFB 917: Resistiv schaltende
                      Chalkogenide für zukünftige Elektronikanwendungen:
                      Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
                      (167917811)},
      pid          = {G:(DE-HGF)POF3-143 / G:(GEPRIS)167917811},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:31439757},
      UT           = {WOS:000490014700037},
      doi          = {10.1126/science.aay0291},
      url          = {https://juser.fz-juelich.de/record/878241},
}