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000878244 1001_ $$0P:(DE-Juel1)138909$$aWang, He$$b0$$eCorresponding author
000878244 245__ $$aFerromagnetic Resonance of Single-Crystalline La 0.67 Sr 0.33 MnO 3 Thin Film Integrated on Silicon
000878244 260__ $$aNew York, NY$$bIEEE$$c2019
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000878244 520__ $$aIntegration of high-quality multifunctional oxide thin films in silicon technology promises a wide range of potential applications in low loss spintronic devices such as sensors, detectors, data storage media, and so on. However, the heteroepitaxial growth of functional complex oxides on silicon substrates has been proved challenging, which limits the development of semiconductor-based spintronic devices. In this work, epitaxial single-crystalline La 0.67 Sr 0.33 MnO 3 (LSMO) thin films have been integrated on silicon substrates by epitaxy and transfer carried out at room temperature. The microwave magnetisms of the LSMO thin films transferred on silicon substrates have been investigated under multiple directions of magnetic field by ferromagnetic resonance. The transferred LSMO thin films on silicon substrates preserve the microwave magnetic characteristics of the primary as-grown LSMO thin films. Our results demonstrate that the epitaxy and transfer method has enormous potential in future spintronic applications of functional oxide devices compatible with semiconductor technology without thermal damage.
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000878244 7001_ $$0P:(DE-HGF)0$$aShen, Lvkang$$b1
000878244 7001_ $$0P:(DE-Juel1)161232$$aLu, Lu$$b2
000878244 7001_ $$0P:(DE-HGF)0$$aZhang, Bing$$b3
000878244 7001_ $$0P:(DE-HGF)0$$aMa, Chunrui$$b4
000878244 7001_ $$0P:(DE-HGF)0$$aCao, Cuimei$$b5
000878244 7001_ $$0P:(DE-HGF)0$$aJiang, Changjun$$b6
000878244 7001_ $$0P:(DE-HGF)0$$aLiu, Ming$$b7
000878244 7001_ $$0P:(DE-Juel1)130736$$aJia, Chun-Lin$$b8
000878244 773__ $$0PERI:(DE-600)2034325-5$$a10.1109/LED.2019.2939795$$gVol. 40, no. 11, p. 1856 - 1859$$n11$$p1856 - 1859$$tIEEE electron device letters$$v40$$x1558-0563$$y2019
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