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@ARTICLE{Wang:878244,
      author       = {Wang, He and Shen, Lvkang and Lu, Lu and Zhang, Bing and
                      Ma, Chunrui and Cao, Cuimei and Jiang, Changjun and Liu,
                      Ming and Jia, Chun-Lin},
      title        = {{F}erromagnetic {R}esonance of {S}ingle-{C}rystalline {L}a
                      0.67 {S}r 0.33 {M}n{O} 3 {T}hin {F}ilm {I}ntegrated on
                      {S}ilicon},
      journal      = {IEEE electron device letters},
      volume       = {40},
      number       = {11},
      issn         = {1558-0563},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2020-02713},
      pages        = {1856 - 1859},
      year         = {2019},
      abstract     = {Integration of high-quality multifunctional oxide thin
                      films in silicon technology promises a wide range of
                      potential applications in low loss spintronic devices such
                      as sensors, detectors, data storage media, and so on.
                      However, the heteroepitaxial growth of functional complex
                      oxides on silicon substrates has been proved challenging,
                      which limits the development of semiconductor-based
                      spintronic devices. In this work, epitaxial
                      single-crystalline La 0.67 Sr 0.33 MnO 3 (LSMO) thin films
                      have been integrated on silicon substrates by epitaxy and
                      transfer carried out at room temperature. The microwave
                      magnetisms of the LSMO thin films transferred on silicon
                      substrates have been investigated under multiple directions
                      of magnetic field by ferromagnetic resonance. The
                      transferred LSMO thin films on silicon substrates preserve
                      the microwave magnetic characteristics of the primary
                      as-grown LSMO thin films. Our results demonstrate that the
                      epitaxy and transfer method has enormous potential in future
                      spintronic applications of functional oxide devices
                      compatible with semiconductor technology without thermal
                      damage.},
      cin          = {ER-C-1},
      ddc          = {620},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000496192600038},
      doi          = {10.1109/LED.2019.2939795},
      url          = {https://juser.fz-juelich.de/record/878244},
}