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| Hauptseite > Publikationsdatenbank > Ferromagnetic Resonance of Single-Crystalline La 0.67 Sr 0.33 MnO 3 Thin Film Integrated on Silicon > print |
| Hauptseite > Publikationsdatenbank > Ferromagnetic Resonance of Single-Crystalline La 0.67 Sr 0.33 MnO 3 Thin Film Integrated on Silicon > print |
| 001 | 878244 | ||
| 005 | 20210130005507.0 | ||
| 024 | 7 | _ | |a 10.1109/LED.2019.2939795 |2 doi |
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| 037 | _ | _ | |a FZJ-2020-02713 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 620 |
| 100 | 1 | _ | |a Wang, He |0 P:(DE-Juel1)138909 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Ferromagnetic Resonance of Single-Crystalline La 0.67 Sr 0.33 MnO 3 Thin Film Integrated on Silicon |
| 260 | _ | _ | |a New York, NY |c 2019 |b IEEE |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a Integration of high-quality multifunctional oxide thin films in silicon technology promises a wide range of potential applications in low loss spintronic devices such as sensors, detectors, data storage media, and so on. However, the heteroepitaxial growth of functional complex oxides on silicon substrates has been proved challenging, which limits the development of semiconductor-based spintronic devices. In this work, epitaxial single-crystalline La 0.67 Sr 0.33 MnO 3 (LSMO) thin films have been integrated on silicon substrates by epitaxy and transfer carried out at room temperature. The microwave magnetisms of the LSMO thin films transferred on silicon substrates have been investigated under multiple directions of magnetic field by ferromagnetic resonance. The transferred LSMO thin films on silicon substrates preserve the microwave magnetic characteristics of the primary as-grown LSMO thin films. Our results demonstrate that the epitaxy and transfer method has enormous potential in future spintronic applications of functional oxide devices compatible with semiconductor technology without thermal damage. |
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