%0 Journal Article
%A Wu, Jingying
%A Liang, Zhongshuai
%A Ma, Chunrui
%A Hu, Guangliang
%A Shen, Lvkang
%A Sun, Zixiong
%A Zhang, Yong
%A Lu, Lu
%A Liu, Ming
%A Jia, Chun-Lin
%T Flexible Lead-Free BaTiO 3 Ferroelectric Elements With High Performance
%J IEEE electron device letters
%V 40
%N 6
%@ 1558-0563
%C New York, NY
%I IEEE
%M FZJ-2020-02715
%P 889 - 892
%D 2019
%X High-quality epitaxial (111) BaTiO 3 thin film was successfully fabricated on flexible fluorophlogopite mica substrate by radio frequency magnetron sputtering. The flexible BaTiO 3 thin-film element shows observably stable ferroelectric properties with the bending radius of 4 mm and well-mechanical fatigue resisting performance with 10 4 bending cycles at the bending radius of 6mm. Furthermore, it exhibits excellent ferroelectric fatigue resistance after suffering 10 6 bipolar switching cycles. Most importantly, the element shows good thermal stability in temperature range from 25°C to 100°C. All these stable ferroelectric properties indicate their enormous potential in flexible non-volatile memory devices under harsh working environment.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000469848300012
%R 10.1109/LED.2019.2911956
%U https://juser.fz-juelich.de/record/878246