000878246 001__ 878246
000878246 005__ 20210130005509.0
000878246 0247_ $$2doi$$a10.1109/LED.2019.2911956
000878246 0247_ $$2ISSN$$a0741-3106
000878246 0247_ $$2ISSN$$a1558-0563
000878246 0247_ $$2WOS$$aWOS:000469848300012
000878246 037__ $$aFZJ-2020-02715
000878246 041__ $$aEnglish
000878246 082__ $$a620
000878246 1001_ $$0P:(DE-HGF)0$$aWu, Jingying$$b0$$eCorresponding author
000878246 245__ $$aFlexible Lead-Free BaTiO 3 Ferroelectric Elements With High Performance
000878246 260__ $$aNew York, NY$$bIEEE$$c2019
000878246 3367_ $$2DRIVER$$aarticle
000878246 3367_ $$2DataCite$$aOutput Types/Journal article
000878246 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1596694967_32467
000878246 3367_ $$2BibTeX$$aARTICLE
000878246 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000878246 3367_ $$00$$2EndNote$$aJournal Article
000878246 520__ $$aHigh-quality epitaxial (111) BaTiO 3 thin film was successfully fabricated on flexible fluorophlogopite mica substrate by radio frequency magnetron sputtering. The flexible BaTiO 3 thin-film element shows observably stable ferroelectric properties with the bending radius of 4 mm and well-mechanical fatigue resisting performance with 10 4 bending cycles at the bending radius of 6mm. Furthermore, it exhibits excellent ferroelectric fatigue resistance after suffering 10 6 bipolar switching cycles. Most importantly, the element shows good thermal stability in temperature range from 25°C to 100°C. All these stable ferroelectric properties indicate their enormous potential in flexible non-volatile memory devices under harsh working environment.
000878246 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x0
000878246 588__ $$aDataset connected to CrossRef
000878246 7001_ $$0P:(DE-HGF)0$$aLiang, Zhongshuai$$b1
000878246 7001_ $$0P:(DE-HGF)0$$aMa, Chunrui$$b2
000878246 7001_ $$0P:(DE-HGF)0$$aHu, Guangliang$$b3
000878246 7001_ $$0P:(DE-HGF)0$$aShen, Lvkang$$b4
000878246 7001_ $$0P:(DE-HGF)0$$aSun, Zixiong$$b5
000878246 7001_ $$0P:(DE-Juel1)179270$$aZhang, Yong$$b6
000878246 7001_ $$0P:(DE-Juel1)161232$$aLu, Lu$$b7
000878246 7001_ $$0P:(DE-HGF)0$$aLiu, Ming$$b8
000878246 7001_ $$0P:(DE-Juel1)130736$$aJia, Chun-Lin$$b9
000878246 773__ $$0PERI:(DE-600)2034325-5$$a10.1109/LED.2019.2911956$$gVol. 40, no. 6, p. 889 - 892$$n6$$p889 - 892$$tIEEE electron device letters$$v40$$x1558-0563$$y2019
000878246 8564_ $$uhttps://juser.fz-juelich.de/record/878246/files/08693825.pdf
000878246 8564_ $$uhttps://juser.fz-juelich.de/record/878246/files/08693825.pdf?subformat=pdfa$$xpdfa
000878246 909CO $$ooai:juser.fz-juelich.de:878246$$pVDB
000878246 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130736$$aForschungszentrum Jülich$$b9$$kFZJ
000878246 9131_ $$0G:(DE-HGF)POF3-143$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
000878246 9141_ $$y2020
000878246 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline$$d2020-01-09
000878246 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List$$d2020-01-09
000878246 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index$$d2020-01-09
000878246 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection$$d2020-01-09
000878246 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded$$d2020-01-09
000878246 915__ $$0StatID:(DE-HGF)0160$$2StatID$$aDBCoverage$$bEssential Science Indicators$$d2020-01-09
000878246 915__ $$0StatID:(DE-HGF)1230$$2StatID$$aDBCoverage$$bCurrent Contents - Electronics and Telecommunications Collection$$d2020-01-09
000878246 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology$$d2020-01-09
000878246 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bIEEE ELECTR DEVICE L : 2018$$d2020-01-09
000878246 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS$$d2020-01-09
000878246 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5$$d2020-01-09
000878246 920__ $$lyes
000878246 9201_ $$0I:(DE-Juel1)ER-C-1-20170209$$kER-C-1$$lPhysik Nanoskaliger Systeme$$x0
000878246 980__ $$ajournal
000878246 980__ $$aVDB
000878246 980__ $$aI:(DE-Juel1)ER-C-1-20170209
000878246 980__ $$aUNRESTRICTED