TY  - JOUR
AU  - Wu, Jingying
AU  - Liang, Zhongshuai
AU  - Ma, Chunrui
AU  - Hu, Guangliang
AU  - Shen, Lvkang
AU  - Sun, Zixiong
AU  - Zhang, Yong
AU  - Lu, Lu
AU  - Liu, Ming
AU  - Jia, Chun-Lin
TI  - Flexible Lead-Free BaTiO 3 Ferroelectric Elements With High Performance
JO  - IEEE electron device letters
VL  - 40
IS  - 6
SN  - 1558-0563
CY  - New York, NY
PB  - IEEE
M1  - FZJ-2020-02715
SP  - 889 - 892
PY  - 2019
AB  - High-quality epitaxial (111) BaTiO 3 thin film was successfully fabricated on flexible fluorophlogopite mica substrate by radio frequency magnetron sputtering. The flexible BaTiO 3 thin-film element shows observably stable ferroelectric properties with the bending radius of 4 mm and well-mechanical fatigue resisting performance with 10 4 bending cycles at the bending radius of 6mm. Furthermore, it exhibits excellent ferroelectric fatigue resistance after suffering 10 6 bipolar switching cycles. Most importantly, the element shows good thermal stability in temperature range from 25°C to 100°C. All these stable ferroelectric properties indicate their enormous potential in flexible non-volatile memory devices under harsh working environment.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000469848300012
DO  - DOI:10.1109/LED.2019.2911956
UR  - https://juser.fz-juelich.de/record/878246
ER  -