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@ARTICLE{Wu:878246,
author = {Wu, Jingying and Liang, Zhongshuai and Ma, Chunrui and Hu,
Guangliang and Shen, Lvkang and Sun, Zixiong and Zhang, Yong
and Lu, Lu and Liu, Ming and Jia, Chun-Lin},
title = {{F}lexible {L}ead-{F}ree {B}a{T}i{O} 3 {F}erroelectric
{E}lements {W}ith {H}igh {P}erformance},
journal = {IEEE electron device letters},
volume = {40},
number = {6},
issn = {1558-0563},
address = {New York, NY},
publisher = {IEEE},
reportid = {FZJ-2020-02715},
pages = {889 - 892},
year = {2019},
abstract = {High-quality epitaxial (111) BaTiO 3 thin film was
successfully fabricated on flexible fluorophlogopite mica
substrate by radio frequency magnetron sputtering. The
flexible BaTiO 3 thin-film element shows observably stable
ferroelectric properties with the bending radius of 4 mm and
well-mechanical fatigue resisting performance with 10 4
bending cycles at the bending radius of 6mm. Furthermore, it
exhibits excellent ferroelectric fatigue resistance after
suffering 10 6 bipolar switching cycles. Most importantly,
the element shows good thermal stability in temperature
range from 25°C to 100°C. All these stable ferroelectric
properties indicate their enormous potential in flexible
non-volatile memory devices under harsh working
environment.},
cin = {ER-C-1},
ddc = {620},
cid = {I:(DE-Juel1)ER-C-1-20170209},
pnm = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
pid = {G:(DE-HGF)POF3-143},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000469848300012},
doi = {10.1109/LED.2019.2911956},
url = {https://juser.fz-juelich.de/record/878246},
}