TY  - JOUR
AU  - Hu, Guangliang
AU  - Wu, Jingying
AU  - Ma, Chunrui
AU  - Liang, Zhongshuai
AU  - Liu, Weihua
AU  - Liu, Ming
AU  - Wu, Judy Z.
AU  - Jia, Chun-Lin
TI  - Controlling the Dirac point voltage of graphene by mechanically bending the ferroelectric gate of a graphene field effect transistor
JO  - Materials Horizons
VL  - 6
IS  - 2
SN  - 2051-6355
CY  - Cambridge
PB  - RSC Publ.
M1  - FZJ-2020-02718
SP  - 302 - 310
PY  - 2019
AB  - Controlling the Dirac point voltage of graphene is essential for realizing various practical applications of graphene. Here, control of the doping state is achieved in flexible graphene field effect transistors (GFETs) by applying mechanical bending stress. By gradually increasing the bending strain (the decrease of upward/downward bending radius), the Dirac point (VDirac) linearly shifts to left/right, which is induced by the flexoelectric effect of the ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) gate. In addition, a superior mechanical antifatigue character is obtained in the flexible GFETs, and the doping effect is recoverable. The sensitivity to strain and high bending stability not only offer an easy, controllable and nonintrusive method to obtain a specific doping level in graphene for flexible electric devices, but also highlight the enormous potential of the flexible ferroelectric PLZT-gated GFETs as wearable sensors.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000459726900021
DO  - DOI:10.1039/C8MH01499J
UR  - https://juser.fz-juelich.de/record/878249
ER  -