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000878250 0247_ $$2doi$$a10.1016/j.nanoen.2019.05.076
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000878250 1001_ $$0P:(DE-HGF)0$$aFan, Qiaolan$$b0
000878250 245__ $$aRealization of high energy density in an ultra-wide temperature range through engineering of ferroelectric sandwich structures
000878250 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2019
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000878250 520__ $$aThin film dielectrics are the most selected materials for many power electronics owing to their inherent advantages, such as high power density, fast charging-discharging, and long lifetime. Nowadays, additional demands for the film dielectrics are the high performances under harsh operating conditions, e.g. at high temperatures, which is highly favourable to significantly reduce the size and cost of energy devices. Here, we demonstrated that through design and optimization of the film systems with 1 mol% SiO2-doped BaZr0.35Ti0.65O3 layer sandwiched between two undoped BaZr0.35Ti0.65O3 layers, it is capable to concomitantly enhance breakdown strength and electrical polarization of the systems. The optimized sandwich-structure films yield a greatly improved discharged energy densities of ~130.1 J/cm3 with a high charge-discharge efficiency of ~73.8% at room temperature, as well as retain an ultrahigh discharged energy densities of ~77.8 J/cm3 in the ultra-wide temperature range from −100 to 200 °C. The presented combination of property modulation with structure engineering paves an effective way to meet the increasingly technological challenges and the requirements of modern electrical energy storage applications.
000878250 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x0
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000878250 7001_ $$0P:(DE-HGF)0$$aMa, Chunrui$$b1$$eCorresponding author
000878250 7001_ $$0P:(DE-HGF)0$$aLi, Yi$$b2
000878250 7001_ $$0P:(DE-HGF)0$$aLiang, Zhongshuai$$b3
000878250 7001_ $$0P:(DE-HGF)0$$aCheng, Sheng$$b4
000878250 7001_ $$0P:(DE-HGF)0$$aGuo, Mengyao$$b5
000878250 7001_ $$0P:(DE-HGF)0$$aDai, Yanzhu$$b6
000878250 7001_ $$0P:(DE-HGF)0$$aMa, Chuansheng$$b7
000878250 7001_ $$0P:(DE-Juel1)161232$$aLu, Lu$$b8
000878250 7001_ $$0P:(DE-Juel1)161531$$aWang, Wei$$b9
000878250 7001_ $$0P:(DE-HGF)0$$aWang, Linghang$$b10
000878250 7001_ $$0P:(DE-HGF)0$$aLou, Xiaojie$$b11
000878250 7001_ $$0P:(DE-Juel1)173033$$aLiu, Ming$$b12
000878250 7001_ $$0P:(DE-Juel1)184889$$aWang, Hong$$b13
000878250 7001_ $$0P:(DE-Juel1)130736$$aJia, Chun-Lin$$b14
000878250 773__ $$0PERI:(DE-600)2648700-7$$a10.1016/j.nanoen.2019.05.076$$gVol. 62, p. 725 - 733$$p725 - 733$$tNano energy$$v62$$x2211-2855$$y2019
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