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@ARTICLE{Fan:878250,
      author       = {Fan, Qiaolan and Ma, Chunrui and Li, Yi and Liang,
                      Zhongshuai and Cheng, Sheng and Guo, Mengyao and Dai, Yanzhu
                      and Ma, Chuansheng and Lu, Lu and Wang, Wei and Wang,
                      Linghang and Lou, Xiaojie and Liu, Ming and Wang, Hong and
                      Jia, Chun-Lin},
      title        = {{R}ealization of high energy density in an ultra-wide
                      temperature range through engineering of ferroelectric
                      sandwich structures},
      journal      = {Nano energy},
      volume       = {62},
      issn         = {2211-2855},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2020-02719},
      pages        = {725 - 733},
      year         = {2019},
      abstract     = {Thin film dielectrics are the most selected materials for
                      many power electronics owing to their inherent advantages,
                      such as high power density, fast charging-discharging, and
                      long lifetime. Nowadays, additional demands for the film
                      dielectrics are the high performances under harsh operating
                      conditions, e.g. at high temperatures, which is highly
                      favourable to significantly reduce the size and cost of
                      energy devices. Here, we demonstrated that through design
                      and optimization of the film systems with $1 mol\%$
                      SiO2-doped BaZr0.35Ti0.65O3 layer sandwiched between two
                      undoped BaZr0.35Ti0.65O3 layers, it is capable to
                      concomitantly enhance breakdown strength and electrical
                      polarization of the systems. The optimized
                      sandwich-structure films yield a greatly improved discharged
                      energy densities of ~130.1 J/cm3 with a high
                      charge-discharge efficiency of $~73.8\%$ at room
                      temperature, as well as retain an ultrahigh discharged
                      energy densities of ~77.8 J/cm3 in the ultra-wide
                      temperature range from −100 to 200 °C. The presented
                      combination of property modulation with structure
                      engineering paves an effective way to meet the increasingly
                      technological challenges and the requirements of modern
                      electrical energy storage applications.},
      cin          = {ER-C-1},
      ddc          = {660},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000474636100078},
      doi          = {10.1016/j.nanoen.2019.05.076},
      url          = {https://juser.fz-juelich.de/record/878250},
}