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000878281 037__ $$aFZJ-2020-02744
000878281 041__ $$aEnglish
000878281 1001_ $$0P:(DE-HGF)0$$aGrieb, Tim$$b0
000878281 1112_ $$a21st International Conference on Microscopy of Semiconducting Materials$$cCambridge$$d2020-04-09 - 2020-04-12$$wUK
000878281 245__ $$aMeasuring polarization induced electric fields in AlGaN/GaN nanowires using nano-beam electron diffraction and momentum-resolved 4D-STEM”
000878281 260__ $$c2019
000878281 3367_ $$033$$2EndNote$$aConference Paper
000878281 3367_ $$2DataCite$$aOther
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000878281 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1596695080_32110$$xOther
000878281 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x0
000878281 7001_ $$0P:(DE-Juel1)165314$$aMüller-Caspary, Knut$$b1$$ufzj
000878281 7001_ $$0P:(DE-HGF)0$$aVan Aert, Sandra$$b2
000878281 7001_ $$0P:(DE-HGF)0$$aEickhoff, Martin$$b3
000878281 7001_ $$0P:(DE-HGF)0$$aSoltau, Heike$$b4
000878281 7001_ $$0P:(DE-HGF)0$$aRosenauer, Andreas$$b5
000878281 7001_ $$0P:(DE-HGF)0$$aMüßener, Jan$$b6
000878281 7001_ $$0P:(DE-HGF)0$$aGauquelin, Nicolas$$b7
000878281 7001_ $$0P:(DE-HGF)0$$aRitz, Robert$$b8
000878281 7001_ $$0P:(DE-HGF)0$$aSimson, Martin$$b9
000878281 7001_ $$0P:(DE-HGF)0$$aHille, Pascal$$b10
000878281 7001_ $$0P:(DE-HGF)0$$aSchörmann, Jörg$$b11
000878281 7001_ $$0P:(DE-HGF)0$$aVerbeeck, Johan$$b12
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000878281 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)165314$$aForschungszentrum Jülich$$b1$$kFZJ
000878281 9131_ $$0G:(DE-HGF)POF3-143$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
000878281 9141_ $$y2020
000878281 920__ $$lyes
000878281 9201_ $$0I:(DE-Juel1)ER-C-1-20170209$$kER-C-1$$lPhysik Nanoskaliger Systeme$$x0
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