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@ARTICLE{Lu:878327,
      author       = {Lu, Lu and Dai, Yanzhu and Du, Hongchu and Liu, Ming and
                      Wu, Jingying and Zhang, Yong and Liang, Zhongshuai and Raza,
                      Subhan and Wang, Dawei and Jia, Chun‐Lin},
      title        = {{A}tomic {S}cale {U}nderstanding of the {E}pitaxy of
                      {P}erovskite {O}xides on {F}lexible {M}ica {S}ubstrate},
      journal      = {Advanced materials interfaces},
      volume       = {7},
      number       = {2},
      issn         = {2196-7350},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2020-02779},
      pages        = {1901265 -},
      year         = {2020},
      abstract     = {The excellent functionalities of perovskite oxides and the
                      growing demands for flexible devices lead to great interests
                      on epitaxial growth of functional oxide films on flexible
                      mica substrates. Understanding the film epitaxy on the
                      substrate with a very different crystal structure is a key
                      issue for the optimization of the film growth and hence
                      properties. Such understanding largely depends on knowing
                      the atomic structure of the interfaces between the films and
                      the substrates. Here, the interface between the epitaxial
                      films of SrTiO3 on the fluorophlogopite mica substrate is
                      studied in detail. Two types of interfaces, clean or with
                      secondary phase, exist in this system, leading to two types
                      of crystallographic orientation relationships.
                      Atomic‐resolution scanning transmission electron
                      microscopy images reveal that at the clean interface the
                      (111) Sr–O3 atomic plane of SrTiO3 interacts with the
                      (001) (SiAl)2–O3 plane of mica. This interface structure
                      and thus the epitaxy of the film are understood in light of
                      the strong similarity of the oxygen sublattices in these two
                      atomic planes. First‐principles calculations demonstrate
                      strong bonding of the atoms at the interface, which is also
                      corroborated by the observation of misfit dislocations at
                      the interfaces.},
      cin          = {ER-C-1 / ER-C-2},
      ddc          = {600},
      cid          = {I:(DE-Juel1)ER-C-1-20170209 / I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)
                      / DFG project 167917811 - SFB 917: Resistiv schaltende
                      Chalkogenide für zukünftige Elektronikanwendungen:
                      Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
                      (167917811)},
      pid          = {G:(DE-HGF)POF3-143 / G:(GEPRIS)167917811},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000503847100001},
      doi          = {10.1002/admi.201901265},
      url          = {https://juser.fz-juelich.de/record/878327},
}