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@ARTICLE{Lu:878327,
author = {Lu, Lu and Dai, Yanzhu and Du, Hongchu and Liu, Ming and
Wu, Jingying and Zhang, Yong and Liang, Zhongshuai and Raza,
Subhan and Wang, Dawei and Jia, Chun‐Lin},
title = {{A}tomic {S}cale {U}nderstanding of the {E}pitaxy of
{P}erovskite {O}xides on {F}lexible {M}ica {S}ubstrate},
journal = {Advanced materials interfaces},
volume = {7},
number = {2},
issn = {2196-7350},
address = {Weinheim},
publisher = {Wiley-VCH},
reportid = {FZJ-2020-02779},
pages = {1901265 -},
year = {2020},
abstract = {The excellent functionalities of perovskite oxides and the
growing demands for flexible devices lead to great interests
on epitaxial growth of functional oxide films on flexible
mica substrates. Understanding the film epitaxy on the
substrate with a very different crystal structure is a key
issue for the optimization of the film growth and hence
properties. Such understanding largely depends on knowing
the atomic structure of the interfaces between the films and
the substrates. Here, the interface between the epitaxial
films of SrTiO3 on the fluorophlogopite mica substrate is
studied in detail. Two types of interfaces, clean or with
secondary phase, exist in this system, leading to two types
of crystallographic orientation relationships.
Atomic‐resolution scanning transmission electron
microscopy images reveal that at the clean interface the
(111) Sr–O3 atomic plane of SrTiO3 interacts with the
(001) (SiAl)2–O3 plane of mica. This interface structure
and thus the epitaxy of the film are understood in light of
the strong similarity of the oxygen sublattices in these two
atomic planes. First‐principles calculations demonstrate
strong bonding of the atoms at the interface, which is also
corroborated by the observation of misfit dislocations at
the interfaces.},
cin = {ER-C-1 / ER-C-2},
ddc = {600},
cid = {I:(DE-Juel1)ER-C-1-20170209 / I:(DE-Juel1)ER-C-2-20170209},
pnm = {143 - Controlling Configuration-Based Phenomena (POF3-143)
/ DFG project 167917811 - SFB 917: Resistiv schaltende
Chalkogenide für zukünftige Elektronikanwendungen:
Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
(167917811)},
pid = {G:(DE-HGF)POF3-143 / G:(GEPRIS)167917811},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000503847100001},
doi = {10.1002/admi.201901265},
url = {https://juser.fz-juelich.de/record/878327},
}