%0 Journal Article
%A Elbaz, Anas
%A Buca, Dan
%A von den Driesch, Nils
%A Pantzas, Konstantinos
%A Patriarche, Gilles
%A Zerounian, Nicolas
%A Herth, Etienne
%A Checoury, Xavier
%A Sauvage, Sébastien
%A Sagnes, Isabelle
%A Foti, Antonino
%A Ossikovski, Razvigor
%A Hartmann, Jean-Michel
%A Boeuf, Frédéric
%A Ikonic, Zoran
%A Boucaud, Philippe
%A Grützmacher, Detlev
%A El Kurdi, Moustafa
%T Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
%J Nature photonics
%V 14
%N 6
%@ 1749-4885
%C London [u.a.]
%I Nature Publ. Group
%M FZJ-2020-02872
%P 375
%D 2020
%X Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300 nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, is transformed via tensile strain engineering into a direct-bandgap semiconductor that supports lasing. In this approach, the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. We observe ultra-low-threshold continuous-wave and pulsed lasing at temperatures up to 70 K and 100 K, respectively. Lasers operating at a wavelength of 2.5 μm have thresholds of 0.8 kW cm−2 for nanosecond pulsed optical excitation and 1.1 kW cm−2 under continuous-wave optical excitation. The results offer a path towards monolithically integrated group IV laser sources on a Si photonics platform.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000519841800004
%R 10.1038/s41566-020-0601-5
%U https://juser.fz-juelich.de/record/878467