000878467 001__ 878467
000878467 005__ 20210130005629.0
000878467 0247_ $$2doi$$a10.1038/s41566-020-0601-5
000878467 0247_ $$2ISSN$$a1749-4885
000878467 0247_ $$2ISSN$$a1749-4893
000878467 0247_ $$2Handle$$a2128/25606
000878467 0247_ $$2altmetric$$aaltmetric:77776432
000878467 0247_ $$2WOS$$aWOS:000519841800004
000878467 037__ $$aFZJ-2020-02872
000878467 082__ $$a530
000878467 1001_ $$0P:(DE-HGF)0$$aElbaz, Anas$$b0
000878467 245__ $$aUltra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
000878467 260__ $$aLondon [u.a.]$$bNature Publ. Group$$c2020
000878467 3367_ $$2DRIVER$$aarticle
000878467 3367_ $$2DataCite$$aOutput Types/Journal article
000878467 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1599628582_19886
000878467 3367_ $$2BibTeX$$aARTICLE
000878467 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000878467 3367_ $$00$$2EndNote$$aJournal Article
000878467 520__ $$aStrained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300 nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, is transformed via tensile strain engineering into a direct-bandgap semiconductor that supports lasing. In this approach, the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. We observe ultra-low-threshold continuous-wave and pulsed lasing at temperatures up to 70 K and 100 K, respectively. Lasers operating at a wavelength of 2.5 μm have thresholds of 0.8 kW cm−2 for nanosecond pulsed optical excitation and 1.1 kW cm−2 under continuous-wave optical excitation. The results offer a path towards monolithically integrated group IV laser sources on a Si photonics platform.
000878467 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000878467 588__ $$aDataset connected to CrossRef
000878467 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan$$b1$$eCorresponding author
000878467 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, Nils$$b2
000878467 7001_ $$0P:(DE-HGF)0$$aPantzas, Konstantinos$$b3
000878467 7001_ $$0P:(DE-HGF)0$$aPatriarche, Gilles$$b4
000878467 7001_ $$0P:(DE-HGF)0$$aZerounian, Nicolas$$b5
000878467 7001_ $$0P:(DE-HGF)0$$aHerth, Etienne$$b6
000878467 7001_ $$0P:(DE-HGF)0$$aChecoury, Xavier$$b7
000878467 7001_ $$0P:(DE-HGF)0$$aSauvage, Sébastien$$b8
000878467 7001_ $$0P:(DE-HGF)0$$aSagnes, Isabelle$$b9
000878467 7001_ $$0P:(DE-HGF)0$$aFoti, Antonino$$b10
000878467 7001_ $$0P:(DE-HGF)0$$aOssikovski, Razvigor$$b11
000878467 7001_ $$0P:(DE-HGF)0$$aHartmann, Jean-Michel$$b12
000878467 7001_ $$0P:(DE-HGF)0$$aBoeuf, Frédéric$$b13
000878467 7001_ $$0P:(DE-HGF)0$$aIkonic, Zoran$$b14
000878467 7001_ $$0P:(DE-HGF)0$$aBoucaud, Philippe$$b15
000878467 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b16
000878467 7001_ $$0P:(DE-HGF)0$$aEl Kurdi, Moustafa$$b17$$eCorresponding author
000878467 773__ $$0PERI:(DE-600)2264673-5$$a10.1038/s41566-020-0601-5$$gVol. 14, no. 6, p. 375 - 382$$n6$$p375$$tNature photonics$$v14$$x1749-4885$$y2020
000878467 8564_ $$uhttps://juser.fz-juelich.de/record/878467/files/2001.04927.pdf$$yOpenAccess
000878467 8564_ $$uhttps://juser.fz-juelich.de/record/878467/files/s41566-020-0601-5.pdf
000878467 8564_ $$uhttps://juser.fz-juelich.de/record/878467/files/2001.04927.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000878467 8564_ $$uhttps://juser.fz-juelich.de/record/878467/files/s41566-020-0601-5.pdf?subformat=pdfa$$xpdfa
000878467 909CO $$ooai:juser.fz-juelich.de:878467$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000878467 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich$$b1$$kFZJ
000878467 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161247$$aForschungszentrum Jülich$$b2$$kFZJ
000878467 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich$$b16$$kFZJ
000878467 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000878467 9141_ $$y2020
000878467 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection$$d2020-01-14
000878467 915__ $$0StatID:(DE-HGF)0160$$2StatID$$aDBCoverage$$bEssential Science Indicators$$d2020-01-14
000878467 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology$$d2020-01-14
000878467 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search$$d2020-01-14
000878467 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences$$d2020-01-14
000878467 915__ $$0StatID:(DE-HGF)9930$$2StatID$$aIF >= 30$$bNAT PHOTONICS : 2018$$d2020-01-14
000878467 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS$$d2020-01-14
000878467 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index$$d2020-01-14
000878467 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded$$d2020-01-14
000878467 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000878467 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC$$d2020-01-14
000878467 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bNAT PHOTONICS : 2018$$d2020-01-14
000878467 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline$$d2020-01-14
000878467 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz$$d2020-01-14$$wger
000878467 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List$$d2020-01-14
000878467 920__ $$lyes
000878467 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000878467 9201_ $$0I:(DE-Juel1)PGI-10-20170113$$kPGI-10$$lJARA Institut Green IT$$x1
000878467 9201_ $$0I:(DE-Juel1)VDB881$$kJARA-FIT$$lJülich-Aachen Research Alliance - Fundamentals of Future Information Technology$$x2
000878467 980__ $$ajournal
000878467 980__ $$aVDB
000878467 980__ $$aUNRESTRICTED
000878467 980__ $$aI:(DE-Juel1)PGI-9-20110106
000878467 980__ $$aI:(DE-Juel1)PGI-10-20170113
000878467 980__ $$aI:(DE-Juel1)VDB881
000878467 9801_ $$aFullTexts