TY  - JOUR
AU  - Elbaz, Anas
AU  - Buca, Dan
AU  - von den Driesch, Nils
AU  - Pantzas, Konstantinos
AU  - Patriarche, Gilles
AU  - Zerounian, Nicolas
AU  - Herth, Etienne
AU  - Checoury, Xavier
AU  - Sauvage, Sébastien
AU  - Sagnes, Isabelle
AU  - Foti, Antonino
AU  - Ossikovski, Razvigor
AU  - Hartmann, Jean-Michel
AU  - Boeuf, Frédéric
AU  - Ikonic, Zoran
AU  - Boucaud, Philippe
AU  - Grützmacher, Detlev
AU  - El Kurdi, Moustafa
TI  - Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
JO  - Nature photonics
VL  - 14
IS  - 6
SN  - 1749-4885
CY  - London [u.a.]
PB  - Nature Publ. Group
M1  - FZJ-2020-02872
SP  - 375
PY  - 2020
AB  - Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300 nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, is transformed via tensile strain engineering into a direct-bandgap semiconductor that supports lasing. In this approach, the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. We observe ultra-low-threshold continuous-wave and pulsed lasing at temperatures up to 70 K and 100 K, respectively. Lasers operating at a wavelength of 2.5 μm have thresholds of 0.8 kW cm−2 for nanosecond pulsed optical excitation and 1.1 kW cm−2 under continuous-wave optical excitation. The results offer a path towards monolithically integrated group IV laser sources on a Si photonics platform.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000519841800004
DO  - DOI:10.1038/s41566-020-0601-5
UR  - https://juser.fz-juelich.de/record/878467
ER  -