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@ARTICLE{Elbaz:878467,
      author       = {Elbaz, Anas and Buca, Dan and von den Driesch, Nils and
                      Pantzas, Konstantinos and Patriarche, Gilles and Zerounian,
                      Nicolas and Herth, Etienne and Checoury, Xavier and Sauvage,
                      Sébastien and Sagnes, Isabelle and Foti, Antonino and
                      Ossikovski, Razvigor and Hartmann, Jean-Michel and Boeuf,
                      Frédéric and Ikonic, Zoran and Boucaud, Philippe and
                      Grützmacher, Detlev and El Kurdi, Moustafa},
      title        = {{U}ltra-low-threshold continuous-wave and pulsed lasing in
                      tensile-strained {G}e{S}n alloys},
      journal      = {Nature photonics},
      volume       = {14},
      number       = {6},
      issn         = {1749-4885},
      address      = {London [u.a.]},
      publisher    = {Nature Publ. Group},
      reportid     = {FZJ-2020-02872},
      pages        = {375},
      year         = {2020},
      abstract     = {Strained GeSn alloys are promising for realizing light
                      emitters based entirely on group IV elements. Here, we
                      report GeSn microdisk lasers encapsulated with a SiNx
                      stressor layer to produce tensile strain. A 300 nm-thick
                      GeSn layer with $5.4 at\%$ Sn, which is an
                      indirect-bandgap semiconductor as-grown, is transformed via
                      tensile strain engineering into a direct-bandgap
                      semiconductor that supports lasing. In this approach, the
                      low Sn concentration enables improved defect engineering and
                      the tensile strain delivers a low density of states at the
                      valence band edge, which is the light hole band. We observe
                      ultra-low-threshold continuous-wave and pulsed lasing at
                      temperatures up to 70 K and 100 K, respectively. Lasers
                      operating at a wavelength of 2.5 μm have thresholds of
                      0.8 kW cm−2 for nanosecond pulsed optical excitation
                      and 1.1 kW cm−2 under continuous-wave optical
                      excitation. The results offer a path towards monolithically
                      integrated group IV laser sources on a Si photonics
                      platform.},
      cin          = {PGI-9 / PGI-10 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      I:(DE-Juel1)VDB881},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000519841800004},
      doi          = {10.1038/s41566-020-0601-5},
      url          = {https://juser.fz-juelich.de/record/878467},
}