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000878468 1001_ $$0P:(DE-HGF)0$$aZhang, Liyao$$b0$$eCorresponding author
000878468 245__ $$aStructural Property Study for GeSn Thin Films
000878468 260__ $$aBasel$$bMDPI$$c2020
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000878468 520__ $$aThe structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE
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000878468 7001_ $$0P:(DE-HGF)0$$aSong, Yuxin$$b1
000878468 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, Nils$$b2
000878468 7001_ $$0P:(DE-HGF)0$$aZhang, Zhenpu$$b3
000878468 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b4
000878468 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b5
000878468 7001_ $$0P:(DE-HGF)0$$aWang, Shumin$$b6$$eCorresponding author
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