TY  - JOUR
AU  - Zhang, Liyao
AU  - Song, Yuxin
AU  - von den Driesch, Nils
AU  - Zhang, Zhenpu
AU  - Buca, Dan Mihai
AU  - Grützmacher, Detlev
AU  - Wang, Shumin
TI  - Structural Property Study for GeSn Thin Films
JO  - Materials
VL  - 13
IS  - 16
SN  - 1996-1944
CY  - Basel
PB  - MDPI
M1  - FZJ-2020-02873
SP  - 3645
PY  - 2020
AB  - The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE
LB  - PUB:(DE-HGF)16
C6  - pmid:32824570
UR  - <Go to ISI:>//WOS:000567070600001
DO  - DOI:10.3390/ma13163645
UR  - https://juser.fz-juelich.de/record/878468
ER  -