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@ARTICLE{Zhang:878468,
      author       = {Zhang, Liyao and Song, Yuxin and von den Driesch, Nils and
                      Zhang, Zhenpu and Buca, Dan Mihai and Grützmacher, Detlev
                      and Wang, Shumin},
      title        = {{S}tructural {P}roperty {S}tudy for {G}e{S}n {T}hin
                      {F}ilms},
      journal      = {Materials},
      volume       = {13},
      number       = {16},
      issn         = {1996-1944},
      address      = {Basel},
      publisher    = {MDPI},
      reportid     = {FZJ-2020-02873},
      pages        = {3645},
      year         = {2020},
      abstract     = {The structural properties of GeSn thin films with different
                      Sn concentrations and thicknesses grown on Ge (001) by
                      molecular beam epitaxy (MBE) and on Ge-buffered Si (001)
                      wafers by chemical vapor deposition (CVD) were analyzed
                      through high resolution X-ray diffraction and
                      cross-sectional transmission electron microscopy.
                      Two-dimensional reciprocal space maps around the asymmetric
                      (224) reflection were collected by X-ray diffraction for
                      both the whole structures and the GeSn epilayers. The
                      broadenings of the features of the GeSn epilayers with
                      different relaxations in the ω direction, along the ω-2θ
                      direction and parallel to the surface were investigated. The
                      dislocations were identified by transmission electron
                      microscopy. Threading dislocations were found in MBE grown
                      GeSn layers, but not in the CVD grown ones. The point
                      defects and dislocations were two possible reasons for the
                      poor optical properties in the GeSn alloys grown by MBE},
      cin          = {PGI-9 / PGI-10 / JARA-FIT},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      I:(DE-Juel1)VDB881},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:32824570},
      UT           = {WOS:000567070600001},
      doi          = {10.3390/ma13163645},
      url          = {https://juser.fz-juelich.de/record/878468},
}