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@ARTICLE{Rosenbach:878488,
      author       = {Rosenbach, Daniel and Oellers, Nico and Jalil, Abdur Rehman
                      and Mikulics, Martin and Kölzer, Jonas and Zimmermann, Erik
                      and Mussler, Gregor and Bunte, Stephany and Grützmacher,
                      Detlev and Lüth, Hans and Schäpers, Thomas},
      title        = {{Q}uantum {T}ransport in {T}opological {S}urface {S}tates
                      of {S}electively {G}rown {B}i2{T}e3 {N}anoribbons},
      journal      = {Advanced electronic materials},
      volume       = {6},
      number       = {8},
      issn         = {2199-160X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH Verlag GmbH $\&$ Co. KG},
      reportid     = {FZJ-2020-02877},
      pages        = {2000205 -},
      year         = {2020},
      abstract     = {Quasi-1D nanowires of topological insulators are candidate
                      structures in superconductor hybrid architectures for
                      Majorana fermion based quantum computation schemes. Here,
                      selectively grown Bi2Te3 topological insulator nanoribbons
                      at cryogenic temperatures are investigated. The nanoribbons
                      are defined in deep-etched Si3N4/SiO2 nano-trenches on a
                      silicon (111) substrate followed by a selective area growth
                      process via molecular beam epitaxy. The selective area
                      growth is benefcial to the device quality, as no subsequent
                      fabrication needs to be performed to shape the nanoribbons.
                      In the diffusive transport regime of these unintentionally
                      n-doped Bi2Te3 topological insulator nanoribbons, electron
                      trajectories are identifed by analyzing angle dependent
                      universal conductance fluctuation spectra. When the sample
                      is tilted from a perpendicular to a parallel magnetic feld
                      orientation, these high frequent conductance modulations
                      merge with low frequent Aharonov–Bohm type oscillations
                      originating from the topologically protected surface states
                      along the nanoribbon perimeter. For 500 nm wide Hall bars
                      low frequent Shubnikov–de Haas oscillations are identified
                      in a perpendicular magnetic feld orientation. These reveal a
                      topological, high-mobility, 2D transport channel, partially
                      decoupled from the bulk of the material.},
      cin          = {PGI-9 / HNF / ER-C-2},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)HNF-20170116 /
                      I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522)},
      pid          = {G:(DE-HGF)POF3-522},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000552773600001},
      doi          = {10.1002/aelm.202000205},
      url          = {https://juser.fz-juelich.de/record/878488},
}