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| 001 | 878488 | ||
| 005 | 20220930130248.0 | ||
| 024 | 7 | _ | |a 10.1002/aelm.202000205 |2 doi |
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| 100 | 1 | _ | |a Rosenbach, Daniel |0 P:(DE-Juel1)167347 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Quantum Transport in Topological Surface States of Selectively Grown Bi2Te3 Nanoribbons |
| 260 | _ | _ | |a Weinheim |c 2020 |b Wiley-VCH Verlag GmbH & Co. KG |
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| 520 | _ | _ | |a Quasi-1D nanowires of topological insulators are candidate structures in superconductor hybrid architectures for Majorana fermion based quantum computation schemes. Here, selectively grown Bi2Te3 topological insulator nanoribbons at cryogenic temperatures are investigated. The nanoribbons are defined in deep-etched Si3N4/SiO2 nano-trenches on a silicon (111) substrate followed by a selective area growth process via molecular beam epitaxy. The selective area growth is benefcial to the device quality, as no subsequent fabrication needs to be performed to shape the nanoribbons. In the diffusive transport regime of these unintentionally n-doped Bi2Te3 topological insulator nanoribbons, electron trajectories are identifed by analyzing angle dependent universal conductance fluctuation spectra. When the sample is tilted from a perpendicular to a parallel magnetic feld orientation, these high frequent conductance modulations merge with low frequent Aharonov–Bohm type oscillations originating from the topologically protected surface states along the nanoribbon perimeter. For 500 nm wide Hall bars low frequent Shubnikov–de Haas oscillations are identified in a perpendicular magnetic feld orientation. These reveal a topological, high-mobility, 2D transport channel, partially decoupled from the bulk of the material. |
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| 773 | _ | _ | |a 10.1002/aelm.202000205 |g Vol. 6, no. 8, p. 2000205 - |0 PERI:(DE-600)2810904-1 |n 8 |p 2000205 - |t Advanced electronic materials |v 6 |y 2020 |x 2199-160X |
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