000878652 001__ 878652 000878652 005__ 20240610121227.0 000878652 0247_ $$2doi$$a10.1088/1361-6528/aaf9ce 000878652 0247_ $$2ISSN$$a0957-4484 000878652 0247_ $$2ISSN$$a1361-6528 000878652 0247_ $$2pmid$$apmid:30566920 000878652 0247_ $$2WOS$$aWOS:000468639700002 000878652 037__ $$aFZJ-2020-02973 000878652 041__ $$aEnglish 000878652 082__ $$a530 000878652 1001_ $$0P:(DE-Juel1)143949$$aSchnedler, M.$$b0 000878652 245__ $$aComposition modulation by twinning in InAsSb nanowires 000878652 260__ $$aBristol$$bIOP Publ.$$c2019 000878652 3367_ $$2DRIVER$$aarticle 000878652 3367_ $$2DataCite$$aOutput Types/Journal article 000878652 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1599545755_31238 000878652 3367_ $$2BibTeX$$aARTICLE 000878652 3367_ $$2ORCID$$aJOURNAL_ARTICLE 000878652 3367_ $$00$$2EndNote$$aJournal Article 000878652 520__ $$aWe observe a composition modulated axial heterostructure in zincblende (ZB) InAs0.90Sb0.10 nanowires initiated by pseudo-periodic twin boundaries using scanning tunneling microscopy. The twin boundaries exhibit four planes with reduced Sb concentration due to a lower Sb incorporation during lateral overgrowth of a 4H wurtzite as compared to a ZB stacking sequence. We anticipate that this leads to compositional band offsets in addition to known structural band offsets present between 4H and ZB polytypes, changing the band alignment from type II to type I. 000878652 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x0 000878652 536__ $$0G:(DE-HGF)POF3-144$$a144 - Controlling Collective States (POF3-144)$$cPOF3-144$$fPOF III$$x1 000878652 588__ $$aDataset connected to CrossRef 000878652 7001_ $$0P:(DE-HGF)0$$aXu, T.$$b1 000878652 7001_ $$0P:(DE-Juel1)145975$$aPortz, V.$$b2 000878652 7001_ $$0P:(DE-HGF)0$$aNys, J-P$$b3 000878652 7001_ $$00000-0002-0769-5429$$aPlissard, S. 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