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@ARTICLE{Sternlicht:878657,
      author       = {Sternlicht, Hadas and Rheinheimer, Wolfgang and
                      Dunin-Borkowski, Rafal E. and Hoffmann, Michael J. and
                      Kaplan, Wayne D.},
      title        = {{C}haracterization of grain boundary disconnections in
                      {S}r{T}i{O}3 part {I}: the dislocation component of grain
                      boundary disconnections},
      journal      = {Journal of materials science},
      volume       = {54},
      number       = {5},
      issn         = {1573-4803},
      address      = {Dordrecht [u.a.]},
      publisher    = {Springer Science + Business Media B.V},
      reportid     = {FZJ-2020-02978},
      pages        = {3694 - 3709},
      year         = {2019},
      abstract     = {High-resolution transmission electron microscopy is often
                      used to characterize grain boundaries, but it is usually
                      limited to special high symmetry boundaries with a high
                      density of coincident sites. For these ‘special’
                      boundaries, both crystals can be brought into a low-index
                      zone-axis with the boundary plane parallel to the incident
                      electron beam. In this case the atomistic structure of the
                      boundary can be solved, which is not possible for other,
                      more general grain boundaries. In the present study, general
                      grain boundaries in SrTiO3 were analyzed using
                      aberration-corrected transmission electron microscopy and
                      scanning transmission electron microscopy. These boundaries
                      included at least one type of disconnection (i.e., defects
                      that can have a step and/or a dislocation component). Since
                      the dislocation component of disconnections along general
                      grain boundaries cannot be fully resolved using the methods
                      currently available, a plane matching approach was used to
                      compare disconnections at different boundaries. Using this
                      approach, the dislocation component of the disconnections
                      was partially characterized and was found to have an edge
                      component mainly parallel to {100} and {110}, close to
                      normal to the macroscopic grain boundary plane. The step
                      component of the disconnections was found to be aligned
                      mainly parallel to the same crystallographic planes ({100}
                      and {110}).},
      cin          = {ER-C-1},
      ddc          = {670},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000452712800002},
      doi          = {10.1007/s10853-018-3096-4},
      url          = {https://juser.fz-juelich.de/record/878657},
}