000878661 001__ 878661
000878661 005__ 20210130005716.0
000878661 0247_ $$2doi$$a10.1016/j.tsf.2019.04.035
000878661 0247_ $$2ISSN$$a0040-6090
000878661 0247_ $$2ISSN$$a1879-2731
000878661 0247_ $$2WOS$$aWOS:000467389900016
000878661 037__ $$aFZJ-2020-02982
000878661 041__ $$aEnglish
000878661 082__ $$a660
000878661 1001_ $$00000-0003-3008-2935$$aMacková, A.$$b0$$eCorresponding author
000878661 245__ $$aDamage accumulation and implanted Gd and Au position in a- and c-plane GaN
000878661 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2019
000878661 3367_ $$2DRIVER$$aarticle
000878661 3367_ $$2DataCite$$aOutput Types/Journal article
000878661 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1599651061_20793
000878661 3367_ $$2BibTeX$$aARTICLE
000878661 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000878661 3367_ $$00$$2EndNote$$aJournal Article
000878661 520__ $$a(0001) c-plane and (11−20) a-plane GaN epitaxial layers were implanted with 400 keV Au+ and Gd+ ions using ion implantation fluences of 5 × 1014, 1 × 1015 and 5 × 1015 cm−2. Rutherford Back-Scattering spectrometry in channelling mode (RBS/C) was used to follow the dopant depth profiles and the introduced disorder; the angular dependence of the backscattered ions (angular scans) in c- and a-plane GaN was measured to get insight into structural modification and dopant position in various crystallographic orientations. Defect-accumulation depth profiles exhibited differences for a- and c-plane GaN, with a-plane showing significantly lower accumulated disorder in the buried layer, accompanied by the shift of the maximum damage accumulation into the deeper layer with respect to the theoretical prediction, than c-plane GaN. Angular scans showed channelling preservation in as-implanted samples and better channelling recovery in the annealed a-plane GaN compared to c-plane GaN. The angular scan widths were simulated by FLUX code as well as the half-width modifications of angular scans were discussed in connection to the damage accumulation. Photoluminescence measurement followed in detail yellow band and band edge luminescence decline after the implantation and the recovery of luminescence spectra features after annealing.
000878661 536__ $$0G:(DE-HGF)POF3-143$$a143 - Controlling Configuration-Based Phenomena (POF3-143)$$cPOF3-143$$fPOF III$$x0
000878661 588__ $$aDataset connected to CrossRef
000878661 7001_ $$0P:(DE-HGF)0$$aMalinský, P.$$b1
000878661 7001_ $$0P:(DE-HGF)0$$aJagerová, A.$$b2
000878661 7001_ $$0P:(DE-HGF)0$$aMikšová, R.$$b3
000878661 7001_ $$0P:(DE-HGF)0$$aSofer, Z.$$b4
000878661 7001_ $$0P:(DE-HGF)0$$aKlímová, K.$$b5
000878661 7001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b6$$ufzj
000878661 7001_ $$0P:(DE-HGF)0$$aBöttger, R.$$b7
000878661 7001_ $$0P:(DE-HGF)0$$aAkhmadaliev, S.$$b8
000878661 7001_ $$0P:(DE-HGF)0$$aOswald, J.$$b9
000878661 773__ $$0PERI:(DE-600)1482896-0$$a10.1016/j.tsf.2019.04.035$$gVol. 680, p. 102 - 113$$p102 - 113$$tThin solid films$$v680$$x0040-6090$$y2019
000878661 909CO $$ooai:juser.fz-juelich.de:878661$$pVDB
000878661 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128613$$aForschungszentrum Jülich$$b6$$kFZJ
000878661 9131_ $$0G:(DE-HGF)POF3-143$$1G:(DE-HGF)POF3-140$$2G:(DE-HGF)POF3-100$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Configuration-Based Phenomena$$x0
000878661 9141_ $$y2020
000878661 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz$$d2020-01-03$$wger
000878661 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bTHIN SOLID FILMS : 2018$$d2020-01-03
000878661 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS$$d2020-01-03
000878661 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline$$d2020-01-03
000878661 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search$$d2020-01-03
000878661 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC$$d2020-01-03
000878661 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List$$d2020-01-03
000878661 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index$$d2020-01-03
000878661 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection$$d2020-01-03
000878661 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded$$d2020-01-03
000878661 915__ $$0StatID:(DE-HGF)0160$$2StatID$$aDBCoverage$$bEssential Science Indicators$$d2020-01-03
000878661 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology$$d2020-01-03
000878661 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences$$d2020-01-03
000878661 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5$$d2020-01-03
000878661 920__ $$lyes
000878661 9201_ $$0I:(DE-Juel1)ER-C-2-20170209$$kER-C-2$$lMaterialwissenschaft u. Werkstofftechnik$$x0
000878661 980__ $$ajournal
000878661 980__ $$aVDB
000878661 980__ $$aI:(DE-Juel1)ER-C-2-20170209
000878661 980__ $$aUNRESTRICTED