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@ARTICLE{Mackov:878661,
      author       = {Macková, A. and Malinský, P. and Jagerová, A. and
                      Mikšová, R. and Sofer, Z. and Klímová, K. and Mikulics,
                      M. and Böttger, R. and Akhmadaliev, S. and Oswald, J.},
      title        = {{D}amage accumulation and implanted {G}d and {A}u position
                      in a- and c-plane {G}a{N}},
      journal      = {Thin solid films},
      volume       = {680},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2020-02982},
      pages        = {102 - 113},
      year         = {2019},
      abstract     = {(0001) c-plane and (11−20) a-plane GaN epitaxial layers
                      were implanted with 400 keV Au+ and Gd+ ions using ion
                      implantation fluences of 5 × 1014, 1 × 1015 and
                      5 × 1015 cm−2. Rutherford Back-Scattering
                      spectrometry in channelling mode (RBS/C) was used to follow
                      the dopant depth profiles and the introduced disorder; the
                      angular dependence of the backscattered ions (angular scans)
                      in c- and a-plane GaN was measured to get insight into
                      structural modification and dopant position in various
                      crystallographic orientations. Defect-accumulation depth
                      profiles exhibited differences for a- and c-plane GaN, with
                      a-plane showing significantly lower accumulated disorder in
                      the buried layer, accompanied by the shift of the maximum
                      damage accumulation into the deeper layer with respect to
                      the theoretical prediction, than c-plane GaN. Angular scans
                      showed channelling preservation in as-implanted samples and
                      better channelling recovery in the annealed a-plane GaN
                      compared to c-plane GaN. The angular scan widths were
                      simulated by FLUX code as well as the half-width
                      modifications of angular scans were discussed in connection
                      to the damage accumulation. Photoluminescence measurement
                      followed in detail yellow band and band edge luminescence
                      decline after the implantation and the recovery of
                      luminescence spectra features after annealing.},
      cin          = {ER-C-2},
      ddc          = {660},
      cid          = {I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000467389900016},
      doi          = {10.1016/j.tsf.2019.04.035},
      url          = {https://juser.fz-juelich.de/record/878661},
}