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@ARTICLE{Funck:878686,
      author       = {Funck, Carsten and Bäumer, Christoph and Wiefels, Stefan
                      and Hennen, Tyler and Waser, R. and Hoffmann-Eifert, Susanne
                      and Dittmann, Regina and Menzel, Stephan},
      title        = {{C}omprehensive model for the electronic transport in
                      {P}t/{S}r{T}i {O} 3 analog memristive devices},
      journal      = {Physical review / B},
      volume       = {102},
      number       = {3},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2020-03004},
      pages        = {035307},
      year         = {2020},
      abstract     = {The presented study considers the electronic conduction
                      across a SrTiO3/Pt Schottky electrode in a resistive
                      switching cell. It is generally accepted that the resistive
                      switching effect is based on the migration of oxygen
                      vacancies, which can be understood as mobile donors. In the
                      experimental approach, a Nb:SrTiO3/SrTiO3/Pt resistive
                      switching cell is fabricated and tested for its electronic
                      and resistive switching characteristics. Using different
                      voltage stimuli, several analog resistance states are
                      realized. Afterwards, the electrical transport properties
                      under different applied voltages and temperatures are
                      measured for each analog resistive state. To gain physical
                      insight into the analog resistive switching a numerical
                      simulation model is developed. The electronic conduction is
                      calculated based on the single band transport theory and a
                      phonon scattering theory accounting for polar material
                      systems. The simulation model allows testing of the
                      conduction in these resistive switching cells by using
                      different doping (oxygen vacancy) concentrations. Combining
                      the simulation model and the experiment, it delivers a
                      comprehensive physical description for the conduction. By
                      means of simulation, the energy resolved current transport
                      across the Schottky barrier is analyzed. It forms a peaklike
                      distribution, originating from the limited thermal
                      excitation and tunneling probability across the SrTiO3/Pt
                      Schottky barrier. Thus, the conduction processes in all
                      states are identified as a balance between a thermally
                      assisted tunneling effect and a phonon dominated bulk
                      transport. Applying this understanding, the resistive
                      switching effect is reduced to a modification of the
                      Schottky tunnel barrier, based on the rearrangement of
                      oxygen vacancies. Thus a low vacancy concentration leads to
                      a high and wide tunneling barrier, which is reduced and
                      shortened for higher concentrations. All resistance states
                      in between are understood as an adjustment of intermediate
                      tunneling barriers. The physical insights leading to the
                      realization of analog resistance states is mandatory to
                      realize new types of neuromorphic computing circuits based
                      on resistive switching devices. Furthermore, the obtained
                      results could be easily transferred to other systems where a
                      static doping concentration applies. This makes the results
                      highly interesting to other applications in the field of
                      electronic oxides and Schottky barrier dominated systems.},
      cin          = {PGI-7 / PGI-10 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {524 - Controlling Collective States (POF3-524) / 521 -
                      Controlling Electron Charge-Based Phenomena (POF3-521) /
                      Advanced Computing Architectures $(aca_20190115)$},
      pid          = {G:(DE-HGF)POF3-524 / G:(DE-HGF)POF3-521 /
                      $G:(DE-Juel1)aca_20190115$},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000550579000004},
      doi          = {10.1103/PhysRevB.102.035307},
      url          = {https://juser.fz-juelich.de/record/878686},
}