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MANIC

Materials for Neuromorphic Circuits

CoordinatorUniversity of London - University College London ; University of Zurich ; Queen's University Belfast ; University of Twente ; AGENCIA ESTATAL CONSEJO SUPERIOR DEINVESTIGACIONES CIENTIFICAS ; Forschungszentrum Jülich ; Bielefeld University ; École Polytechnique Fédérale de Lausanne ; University of Picardie Jules Verne ; IBM Research GmbH ; THE CHANCELLOR MASTERS AND SCHOLARSOF THE UNIVERSITY OF CAMBRIDGE ; University of Groningen
Grant period2019-11-01 - 2024-04-30
Funding bodyEuropean Union
Call numberH2020-MSCA-ITN-2019
Grant number861153
IdentifierG:(EU-Grant)861153

Note: Large efforts are invested into developing computing platforms that will be able to emulate the low power consumption, flexibility of connectivity or programming efficiency of the human brain. The most common approach so far is based on a feedback loop that includes neuroscientists, computer scientists and circuit engineers. Recent successes in this direction motivate the scientific community to start working on the next big challenge: using materials that emulate neural networks. For that, new players are needed: material scientists, who look into alternatives to silicon in order to develop basic device units, more fitting to the needs of cognitive-type processing than current transistors. We notice that recent progress in chemistry and materials sciences (atomically controlled materials) and nanotechnology (diversity of tools to probe the nanometer scale) brings exciting possibilities for novel approaches in the area of neuromorphic computing. Clearly, the type of materials, physical responses and spatial dimensions considered in the design of neuromorphic systems will crucially determine their utilization, properties and cost, and consequently their societal and economic impact. Therefore, it is urgent that chemists and materials scientists also join forces in the development of the future neuromorphic computer. MANIC aims to offer complementary expertise to current approaches by recruiting fifteen Early Stage Researchers (ESRs) and providing them with the best possible research, academic and professional training, to prepare them for the challenge of developing advanced materials with memory, plasticity and self-organization that will perform better than the current solutions to emulate neural networks and, eventually, learn.
     

Recent Publications

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http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Invited)
From Nanoionic effects in valence change memoriest o neuromorphic sensing
Engineering Conferences International (ECI) – Nontioiometric Compounds VIII, TainanTainan, Taiwan, 3 Nov 2024 - 7 Nov 20242024-11-032024-11-07 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Invited)
From nanoionic effects in valence change memories to neuromorphic sensing
Engineering Conferences International, ECI, TaiwanTaiwan, Tainan, 3 Nov 2024 - 8 Nov 20242024-11-032024-11-08 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;
Resolving the Relaxation of Volatile Valence Change Memory
Advanced electronic materials 10(12), 2400062 () [10.1002/aelm.202400062] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Journal Article  ;  ;  ;  ;  ;  ;
Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO x ReRAM devices
Nanoscale horizons 9(5), 775-784 () [10.1039/D4NH00072B] OpenAccess  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non-conference) (Other)  ;  ;
Volatile SrTiO3 Devices
Network Wide Event of Manic, CambridgeCambridge, UK, 26 Jun 2023 - 30 Jun 20232023-06-262023-06-30 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Other)  ;  ;  ;  ;  ;  ;  ;  ;
Rational design of memristive devices for new computing paradigm
Fismat 2023, MilanoMilano, Italy, 4 Sep 2023 - 9 Sep 20232023-09-042023-09-09 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Invited)
Rational design of redoxed-based memristive devices for novel computing paradigm
Materials Research Society Fall Meeting, BostonBoston, USA, 27 Nov 2022 - 2 Dec 20222022-11-272022-12-02 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Talk (non-conference) (Invited)
Redox-based memristive devices: Current knowledge and future applications
NanoLund Seminar, LundLund, Sweden, 6 Oct 2022 - 6 Oct 20222022-10-062022-10-06 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Invited)
Rational design of redoxed-based memristive devices for neuromorphic computing
CINT Annual User Conference, virtualvirtual, virtual, 21 Sep 2022 - 21 Sep 20222022-09-212022-09-21 BibTeX | EndNote: XML, Text | RIS

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Conference Presentation (Invited)  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;
Detecting and engineering oxygen vacancies in tantalum oxide memristive devices
Solid State Ionics Conference, BostonBoston, USA, 17 Jul 2022 - 22 Jul 20222022-07-172022-07-22 BibTeX | EndNote: XML, Text | RIS

All known publications ...
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 Record created 2020-09-04, last modified 2023-02-10
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