Contribution to a book

FZJ-2020-03647

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electrical Properties of LaLuO3/Si(100) Structures Prepared by Molecular Beam Deposition

Gomeniuk, Y. Y. ; Gomeniuk, Y. V. ; Nazarova, A. N. ; Hurley, P. K. ; Cherkaoui, K. ; Monaghan, S. ; Gottlob, H. D. B. ; Schmidt, M. ; Schubert, J.FZJ* ; Lopes, J. M. J.FZJ* ; Engström, O.

2010
Electrochemical Society (ECS) Pennington, NJ

This record in other databases:    

Please use a persistent id in citations: doi:10.1149/1.3481609

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010

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