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000885264 037__ $$aFZJ-2020-03668
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000885264 1001_ $$0P:(DE-Juel1)138778$$aWirths, Stephan$$b0$$eCorresponding author
000885264 245__ $$aEpitaxial Growth of Ge1-xSnx by REduced Pressure CVD Using SnC14 and Ge2H6
000885264 260__ $$aPennington, NJ$$bElectrochemical Society (ECS)$$c2013
000885264 300__ $$a885-893
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000885264 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b1
000885264 7001_ $$0P:(DE-Juel1)128639$$aTiedemann, Andreas$$b2
000885264 7001_ $$0P:(DE-Juel1)125595$$aHolländer, Bernhard$$b3
000885264 7001_ $$0P:(DE-Juel1)138772$$aBernardy, Patric$$b4
000885264 7001_ $$0P:(DE-Juel1)128637$$aStoica, Toma$$b5
000885264 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b6
000885264 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b7
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000885264 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
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