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@ARTICLE{Hoffer:885492,
      author       = {Hoffer, Barak and Rana, Vikas and Menzel, Stephan and
                      Waser, Rainer and Kvatinsky, Shahar},
      title        = {{E}xperimental {D}emonstration of {M}emristor-{A}ided
                      {L}ogic ({MAGIC}) {U}sing {V}alence {C}hange {M}emory
                      ({VCM})},
      journal      = {IEEE transactions on electron devices},
      volume       = {67},
      number       = {8},
      issn         = {1557-9646},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2020-03873},
      pages        = {3115 - 3122},
      year         = {2020},
      abstract     = {Memristor-aided logic (MAGIC) is a technique for performing
                      in-memory computing using memristive devices. The design of
                      a MAGIC NOR gate has been described in detail, and it serves
                      as the basic building block for several processing-in-memory
                      architectures. However, the input stability of the MAGIC NOR
                      gate forces a limitation on the threshold voltages: the
                      magnitude of the set voltage must be higher than the
                      magnitude of the reset voltage. Unfortunately, many of the
                      current leading resistive switching technologies,
                      particularly, valence change memory (VCM), have the opposite
                      ratio between the threshold voltages. In this article, we
                      experimentally demonstrate the undesirable effects of input
                      instability. Furthermore, we introduce three new MAGIC gates
                      for devices with low set-to-reset voltage ratios and
                      experimentally demonstrate their robust operation using
                      Pt/Ta 2 O 5 /W/Pt devices. The three gates, combined with
                      constant values, are functionally complete and are
                      demonstrated as building blocks for in-memory logic on VCM
                      devices.},
      cin          = {PGI-7 / PGI-10 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000552976100015},
      doi          = {10.1109/TED.2020.3001247},
      url          = {https://juser.fz-juelich.de/record/885492},
}