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@ARTICLE{Rupp:885493,
      author       = {Rupp, Jonathan A. J. and Corraze, Benoît and Besland,
                      Marie-Paule and Cario, Laurent and Tranchant, Julien and
                      Wouters, Dirk J. and Waser, R. and Janod, Etienne},
      title        = {{C}ontrol of stoichiometry and morphology in
                      polycrystalline {V}2{O}3 thin films using oxygen buffers},
      journal      = {Journal of materials science},
      volume       = {55},
      number       = {30},
      issn         = {1573-4803},
      address      = {Dordrecht [u.a.]},
      publisher    = {Springer Science + Business Media B.V},
      reportid     = {FZJ-2020-03874},
      pages        = {14717 - 14727},
      year         = {2020},
      abstract     = {In this work, we investigate the influence of low
                      temperature reduction conditions (873 K) by different oxygen
                      buffers on the off-stoichiometry of polycrystalline V2O3
                      thin films. Vanadium oxide thin films (thickness 300 nm and
                      100 nm) have been grown by reactive sputtering and have been
                      annealed in a buffered atmosphere subsequently. Buffer
                      couples were chosen throughout the stability range of
                      V2−yO3 (y ≤ 0.03) by the use of different oxygen
                      buffer combinations, namely Ni/NiO, Fe/Fe3O4, Cr/Cr2O3 and
                      Mn/MnO. Thin films have been characterized by scanning
                      electron microscopy, X-ray diffractometry and low
                      temperature electrical transport measurements. Upon
                      decreasing the oxygen partial pressure, the mean grain size
                      of V2O3 decreases systematically from 45 ± 20 nm with a
                      high porosity to 27 ± 10 nm without porosity. The most
                      favourable reduction conditions have been identified for Fe-
                      and Cr-based couples. Moreover, all thin films reduced by
                      the four buffer couples exhibit high insulator-to-metal
                      transition temperatures (110–155 K) close to the value of
                      ideally stoichiometric V2−yO3 (y < 0.005) (155 K) as
                      well as large changes in resistance at the transition (three
                      to five orders of magnitude). This oxygen buffer method
                      hence provides a valuable synthesis method of highly
                      stoichiometric polycrystalline V2O3 thin films with
                      technological relevance},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {670},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000549673700005},
      doi          = {10.1007/s10853-020-05028-0},
      url          = {https://juser.fz-juelich.de/record/885493},
}