Home > Publications database > Control of stoichiometry and morphology in polycrystalline V2O3 thin films using oxygen buffers > print |
001 | 885493 | ||
005 | 20210130010420.0 | ||
024 | 7 | _ | |a 10.1007/s10853-020-05028-0 |2 doi |
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100 | 1 | _ | |a Rupp, Jonathan A. J. |0 0000-0002-9886-0505 |b 0 |e Corresponding author |
245 | _ | _ | |a Control of stoichiometry and morphology in polycrystalline V2O3 thin films using oxygen buffers |
260 | _ | _ | |a Dordrecht [u.a.] |c 2020 |b Springer Science + Business Media B.V |
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520 | _ | _ | |a In this work, we investigate the influence of low temperature reduction conditions (873 K) by different oxygen buffers on the off-stoichiometry of polycrystalline V2O3 thin films. Vanadium oxide thin films (thickness 300 nm and 100 nm) have been grown by reactive sputtering and have been annealed in a buffered atmosphere subsequently. Buffer couples were chosen throughout the stability range of V2−yO3 (y ≤ 0.03) by the use of different oxygen buffer combinations, namely Ni/NiO, Fe/Fe3O4, Cr/Cr2O3 and Mn/MnO. Thin films have been characterized by scanning electron microscopy, X-ray diffractometry and low temperature electrical transport measurements. Upon decreasing the oxygen partial pressure, the mean grain size of V2O3 decreases systematically from 45 ± 20 nm with a high porosity to 27 ± 10 nm without porosity. The most favourable reduction conditions have been identified for Fe- and Cr-based couples. Moreover, all thin films reduced by the four buffer couples exhibit high insulator-to-metal transition temperatures (110–155 K) close to the value of ideally stoichiometric V2−yO3 (y < 0.005) (155 K) as well as large changes in resistance at the transition (three to five orders of magnitude). This oxygen buffer method hence provides a valuable synthesis method of highly stoichiometric polycrystalline V2O3 thin films with technological relevance |
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700 | 1 | _ | |a Corraze, Benoît |0 P:(DE-HGF)0 |b 1 |
700 | 1 | _ | |a Besland, Marie-Paule |0 P:(DE-HGF)0 |b 2 |
700 | 1 | _ | |a Cario, Laurent |0 P:(DE-HGF)0 |b 3 |
700 | 1 | _ | |a Tranchant, Julien |0 P:(DE-HGF)0 |b 4 |
700 | 1 | _ | |a Wouters, Dirk J. |0 P:(DE-HGF)0 |b 5 |
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700 | 1 | _ | |a Janod, Etienne |0 P:(DE-HGF)0 |b 7 |
773 | _ | _ | |a 10.1007/s10853-020-05028-0 |g Vol. 55, no. 30, p. 14717 - 14727 |0 PERI:(DE-600)2015305-3 |n 30 |p 14717 - 14727 |t Journal of materials science |v 55 |y 2020 |x 1573-4803 |
856 | 4 | _ | |u https://juser.fz-juelich.de/record/885493/files/2020_Article_-1.pdf |
856 | 4 | _ | |y Published on 2020-07-17. Available in OpenAccess from 2021-07-17. |u https://juser.fz-juelich.de/record/885493/files/2020%2006%20Rupp%20V2O3%20Buffer%20JMS%20Manuscript_Review2.pdf |
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