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037 _ _ |a FZJ-2020-03874
082 _ _ |a 670
100 1 _ |a Rupp, Jonathan A. J.
|0 0000-0002-9886-0505
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245 _ _ |a Control of stoichiometry and morphology in polycrystalline V2O3 thin films using oxygen buffers
260 _ _ |a Dordrecht [u.a.]
|c 2020
|b Springer Science + Business Media B.V
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520 _ _ |a In this work, we investigate the influence of low temperature reduction conditions (873 K) by different oxygen buffers on the off-stoichiometry of polycrystalline V2O3 thin films. Vanadium oxide thin films (thickness 300 nm and 100 nm) have been grown by reactive sputtering and have been annealed in a buffered atmosphere subsequently. Buffer couples were chosen throughout the stability range of V2−yO3 (y ≤ 0.03) by the use of different oxygen buffer combinations, namely Ni/NiO, Fe/Fe3O4, Cr/Cr2O3 and Mn/MnO. Thin films have been characterized by scanning electron microscopy, X-ray diffractometry and low temperature electrical transport measurements. Upon decreasing the oxygen partial pressure, the mean grain size of V2O3 decreases systematically from 45 ± 20 nm with a high porosity to 27 ± 10 nm without porosity. The most favourable reduction conditions have been identified for Fe- and Cr-based couples. Moreover, all thin films reduced by the four buffer couples exhibit high insulator-to-metal transition temperatures (110–155 K) close to the value of ideally stoichiometric V2−yO3 (y < 0.005) (155 K) as well as large changes in resistance at the transition (three to five orders of magnitude). This oxygen buffer method hence provides a valuable synthesis method of highly stoichiometric polycrystalline V2O3 thin films with technological relevance
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700 1 _ |a Corraze, Benoît
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700 1 _ |a Besland, Marie-Paule
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700 1 _ |a Cario, Laurent
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700 1 _ |a Tranchant, Julien
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700 1 _ |a Wouters, Dirk J.
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700 1 _ |a Janod, Etienne
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773 _ _ |a 10.1007/s10853-020-05028-0
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|t Journal of materials science
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856 4 _ |u https://juser.fz-juelich.de/record/885493/files/2020_Article_-1.pdf
856 4 _ |y Published on 2020-07-17. Available in OpenAccess from 2021-07-17.
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