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@ARTICLE{Rupp:885494,
      author       = {Rupp, J. A. J. and Janod, E. and Besland, M.-P. and
                      Corraze, B. and Kindsmüller, A. and Querré, M. and
                      Tranchant, J. and Cario, L. and Dittmann, R. and Waser, R.
                      and Wouters, D. J.},
      title        = {{C}ompetition between {V}2{O}3 phases deposited by one-step
                      reactive sputtering process on polycrystalline conducting
                      electrode},
      journal      = {Thin solid films},
      volume       = {705},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2020-03875},
      pages        = {138063 -},
      year         = {2020},
      abstract     = {This comprehensive work investigates a technologically
                      appealing synthesis of V2O3 oxide thin films for electronic
                      applications by the use of direct reactive sputtering with a
                      heavily diluted gas mixture on a conducting platinum
                      electrode. Morphological characterization was performed by
                      Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray
                      Diffraction and X-Ray Reflectometry. Vanadium valence states
                      were investigated by X-Ray Photoelectron Spectroscopy and
                      crystalline phases were checked by X-Ray Grazing Incidence
                      measurements. Low temperature electrical transport
                      characteristics were determined by 2-point probe
                      measurements. Only amorphous V2O3 was found to exist in a
                      mixed-valence phase in the investigated parameter range.
                      Deposition temperatures between 400 °C and 550 °C enable
                      formation of mixtures between crystallographic phases of
                      corundum- and bixbyite-type V2O3 polymorphs. Depending on
                      temperature and sputtering power, morphology and
                      stoichiometry can be tuned to generate four distinct type of
                      electrical transport characteristics. Most promising
                      electrical properties of corundum V2O3 with a resistance
                      ratio of up to four orders of magnitude (during the low
                      temperature insulator-to-metal transition) have been
                      obtained for a moderate sputtering power of 50 W (on a 1″
                      target) at a deposition temperature of 600 °C. Reactive
                      sputtering thus enables direct control of structural and
                      electrical parameters for polycrystalline V2O3 thin film
                      phases on a conducting substrate.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {660},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000533601500004},
      doi          = {10.1016/j.tsf.2020.138063},
      url          = {https://juser.fz-juelich.de/record/885494},
}